二氧化钒中半导体-金属相变机理的逐级模拟

IF 0.2 Q4 PHYSICS, MULTIDISCIPLINARY
Aleksander V. Il'inskiy , Marina E. Pashkevich , Eugeniy B. Shadrin
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引用次数: 2

摘要

提出了二氧化钒中半导体-金属相变机理的逐级定性建模算法。该模型的基础是这样一个陈述,即转变具有复杂的性质,由在宽温度范围内发生的非滞后、纯电子Моtt转变和具有热滞后的温度-突变结构Peierls转变组成。该模型的初始阶段是基于求解线性钒离子链的电子谱的量子力学问题。该模型考虑了相关效应和结构转变的马氏体特征,并综合考虑了x射线、光谱、阻抗和磁共振等方法的结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Stage-by-stage modeling of the mechanism of semiconductor–metal phase transition in vanadium dioxide

The algorithm of stage-by-stage qualitative modeling of the mechanism of a semiconductor–metal phase transition in vanadium dioxide has been proposed. The basis for the model is a statement that the transition is complex in character and consists of the anhysteretic, purely electronic Моtt transition occurring over a wide temperature range, and the temperature-abrupt structural Peierls transition having a thermal hysteresis. The initial stage of the model is based on the solution of a quantum-mechanical problem of an electronic spectrum of a linear vanadium-ion's chain. The model is completed by consideration of correlation effects and a martensitic character of the structural transition through taking consecutively account of results obtained by X-ray, spectroscopic, impedansmetric and magnetic resonance methods.

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