{"title":"一种新型铝基钠离子选择性场效应晶体管","authors":"Shin-ichi Wakida, Masataka Yamane, Kazuo Hiiro","doi":"10.1016/0250-6874(89)87035-0","DOIUrl":null,"url":null,"abstract":"<div><p>A durable sodium ion-selective field-effect transistor (ISFET) is proposed with Urushi as the membrane matrix. The sodium ion-sensing membrane is composed of sodium ionophore (ETH 227), di-2-ethylhexylphthalate, potassium tetrakis(<em>p</em>-chlorophenyl)borate and Urushi. The prepared Urushi matrix ISFET showed a linear response in the sodium ion activity range from 100 M to 10<sup>−3.5</sup> M and about 53 mV per decade change of sodium ion activity. The selectivity of the Urushi matrix ISFET was almost the same as that of the corresponding PVC matrix ion-selective electrode. The Urushi ISFET showed excellent stability with drift below 0.15 mV per hour and durability for over a month, because of strong adhesion of the membrane to the Si<sub>3</sub>N<sub>4</sub> gate.</p></div>","PeriodicalId":101159,"journal":{"name":"Sensors and Actuators","volume":"18 3","pages":"Pages 285-290"},"PeriodicalIF":0.0000,"publicationDate":"1989-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0250-6874(89)87035-0","citationCount":"8","resultStr":"{\"title\":\"A novel urushi matrix sodium ion-selective field-effect transistor\",\"authors\":\"Shin-ichi Wakida, Masataka Yamane, Kazuo Hiiro\",\"doi\":\"10.1016/0250-6874(89)87035-0\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>A durable sodium ion-selective field-effect transistor (ISFET) is proposed with Urushi as the membrane matrix. The sodium ion-sensing membrane is composed of sodium ionophore (ETH 227), di-2-ethylhexylphthalate, potassium tetrakis(<em>p</em>-chlorophenyl)borate and Urushi. The prepared Urushi matrix ISFET showed a linear response in the sodium ion activity range from 100 M to 10<sup>−3.5</sup> M and about 53 mV per decade change of sodium ion activity. The selectivity of the Urushi matrix ISFET was almost the same as that of the corresponding PVC matrix ion-selective electrode. The Urushi ISFET showed excellent stability with drift below 0.15 mV per hour and durability for over a month, because of strong adhesion of the membrane to the Si<sub>3</sub>N<sub>4</sub> gate.</p></div>\",\"PeriodicalId\":101159,\"journal\":{\"name\":\"Sensors and Actuators\",\"volume\":\"18 3\",\"pages\":\"Pages 285-290\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0250-6874(89)87035-0\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Sensors and Actuators\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/0250687489870350\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sensors and Actuators","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0250687489870350","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel urushi matrix sodium ion-selective field-effect transistor
A durable sodium ion-selective field-effect transistor (ISFET) is proposed with Urushi as the membrane matrix. The sodium ion-sensing membrane is composed of sodium ionophore (ETH 227), di-2-ethylhexylphthalate, potassium tetrakis(p-chlorophenyl)borate and Urushi. The prepared Urushi matrix ISFET showed a linear response in the sodium ion activity range from 100 M to 10−3.5 M and about 53 mV per decade change of sodium ion activity. The selectivity of the Urushi matrix ISFET was almost the same as that of the corresponding PVC matrix ion-selective electrode. The Urushi ISFET showed excellent stability with drift below 0.15 mV per hour and durability for over a month, because of strong adhesion of the membrane to the Si3N4 gate.
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