Shuhei Maeda, S. Ohshita, K. Furutani, Y. Yakubo, T. Ishizu, T. Atsumi, Y. Ando, D. Matsubayashi, K. Kato, T. Okuda, M. Fujita, S. Yamazaki
{"title":"一种由60nm晶体氧化物半导体晶体管组成的20ns写入45ns读取1014周期持久存储器模块","authors":"Shuhei Maeda, S. Ohshita, K. Furutani, Y. Yakubo, T. Ishizu, T. Atsumi, Y. Ando, D. Matsubayashi, K. Kato, T. Okuda, M. Fujita, S. Yamazaki","doi":"10.1109/ISSCC.2018.8310395","DOIUrl":null,"url":null,"abstract":"Development of LSI targeting artificial intelligence (AI) has accelerated, some chips have been used and are commercially available in a number of applications. LSI capable of performing arithmetic operation for deep learning, etc., at low power and high speed is crucial for achieving more sophisticated AI. Power consumption is increasing significantly owing particularly to the practical use of AI, and power reduction techniques are urgently necessary.","PeriodicalId":6617,"journal":{"name":"2018 IEEE International Solid - State Circuits Conference - (ISSCC)","volume":"9 1","pages":"484-486"},"PeriodicalIF":0.0000,"publicationDate":"2018-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A 20ns-write 45ns-read and 1014-cycle endurance memory module composed of 60nm crystalline oxide semiconductor transistors\",\"authors\":\"Shuhei Maeda, S. Ohshita, K. Furutani, Y. Yakubo, T. Ishizu, T. Atsumi, Y. Ando, D. Matsubayashi, K. Kato, T. Okuda, M. Fujita, S. Yamazaki\",\"doi\":\"10.1109/ISSCC.2018.8310395\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Development of LSI targeting artificial intelligence (AI) has accelerated, some chips have been used and are commercially available in a number of applications. LSI capable of performing arithmetic operation for deep learning, etc., at low power and high speed is crucial for achieving more sophisticated AI. Power consumption is increasing significantly owing particularly to the practical use of AI, and power reduction techniques are urgently necessary.\",\"PeriodicalId\":6617,\"journal\":{\"name\":\"2018 IEEE International Solid - State Circuits Conference - (ISSCC)\",\"volume\":\"9 1\",\"pages\":\"484-486\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Solid - State Circuits Conference - (ISSCC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2018.8310395\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Solid - State Circuits Conference - (ISSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2018.8310395","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 20ns-write 45ns-read and 1014-cycle endurance memory module composed of 60nm crystalline oxide semiconductor transistors
Development of LSI targeting artificial intelligence (AI) has accelerated, some chips have been used and are commercially available in a number of applications. LSI capable of performing arithmetic operation for deep learning, etc., at low power and high speed is crucial for achieving more sophisticated AI. Power consumption is increasing significantly owing particularly to the practical use of AI, and power reduction techniques are urgently necessary.
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