Bi4Ti3O12单晶的电导率和光吸收

U. Salazar-Kuri, M. Mendoza, Dragan Damjanovic, N. Setter
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引用次数: 0

摘要

利用亚开关条件下的介电响应计算了Bi4Ti3O12 (BiT)单晶在宽温度(20-250℃)和面内、面外频率(100 mHz至10 kHz)下的电导率。计算得到的直流电导率的活化能与3 eV左右的能隙大致相同,表明存在电子-空穴电荷运动。偏振光显微镜观察到在3 eV激光的吸收下透射时的主要电子贡献。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Conductivity and optical absorption in Bi4Ti3O12 single crystals
The conductivity of Bi4Ti3O12 (BiT) single crystals was calculated from the dielectric response at subswitching conditions over a wide range of temperatures (20-250 °C) and frequencies (100 mHz to 10 kHz) in-plane and out-of-plane. The calculated activation energy for dc conductivity was approximately the same as the energy gap around 3 eV suggesting an electron-hole charge movement. The dominant electronic contribution was seen by polarized optical microscopy on transmission by the absorption of a laser of 3 eV.
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