{"title":"Bi4Fe2TiO12薄膜和体块中室温多铁性的比较","authors":"Jun Lu, Lijie Qiao, Wuyang Chu","doi":"10.1016/S1005-8850(08)60287-X","DOIUrl":null,"url":null,"abstract":"<div><p>It was reported that both dielectricity and magnetism at room temperature were appreciably improved in Bi<sub>4</sub>Fe<sub>2</sub>TiO<sub>12</sub> film compared with Bi<sub>4</sub>Fe<sub>2</sub>TiO<sub>12</sub> bulk. X-ray diffraction profiles reveal similar crystalline nature and random orientation of the two, but X-ray photoelectron spectroscopy (XPS) experiments indicate that it is 1.4 eV lower binding energy of core-state O1s in the film relative to that of the bulk, so the improvement of multiferroics in the film is attributed to oxygen vacancies and high fraction of interface. The results have promising applications in multifunctional integrated devices.</p></div>","PeriodicalId":100851,"journal":{"name":"Journal of University of Science and Technology Beijing, Mineral, Metallurgy, Material","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2008-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1005-8850(08)60287-X","citationCount":"4","resultStr":"{\"title\":\"Comparison of room-temperature multiferroics in Bi4Fe2TiO12 film and bulk\",\"authors\":\"Jun Lu, Lijie Qiao, Wuyang Chu\",\"doi\":\"10.1016/S1005-8850(08)60287-X\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>It was reported that both dielectricity and magnetism at room temperature were appreciably improved in Bi<sub>4</sub>Fe<sub>2</sub>TiO<sub>12</sub> film compared with Bi<sub>4</sub>Fe<sub>2</sub>TiO<sub>12</sub> bulk. X-ray diffraction profiles reveal similar crystalline nature and random orientation of the two, but X-ray photoelectron spectroscopy (XPS) experiments indicate that it is 1.4 eV lower binding energy of core-state O1s in the film relative to that of the bulk, so the improvement of multiferroics in the film is attributed to oxygen vacancies and high fraction of interface. The results have promising applications in multifunctional integrated devices.</p></div>\",\"PeriodicalId\":100851,\"journal\":{\"name\":\"Journal of University of Science and Technology Beijing, Mineral, Metallurgy, Material\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/S1005-8850(08)60287-X\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of University of Science and Technology Beijing, Mineral, Metallurgy, Material\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S100588500860287X\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of University of Science and Technology Beijing, Mineral, Metallurgy, Material","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S100588500860287X","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Comparison of room-temperature multiferroics in Bi4Fe2TiO12 film and bulk
It was reported that both dielectricity and magnetism at room temperature were appreciably improved in Bi4Fe2TiO12 film compared with Bi4Fe2TiO12 bulk. X-ray diffraction profiles reveal similar crystalline nature and random orientation of the two, but X-ray photoelectron spectroscopy (XPS) experiments indicate that it is 1.4 eV lower binding energy of core-state O1s in the film relative to that of the bulk, so the improvement of multiferroics in the film is attributed to oxygen vacancies and high fraction of interface. The results have promising applications in multifunctional integrated devices.
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