用真空热蒸发法研究氧化铟薄膜的结构和光学特性

Y. Veeraswamy, Y. Vijayakumr, M. V. Ramana Reddy
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引用次数: 6

摘要

以纯度为99.99%的氧化铟粉末为原料,采用真空热蒸发法制备氧化铟薄膜。采用超声清洗和干燥的玻璃基板沉积In2O3薄膜。薄膜在3×10-5mbar压力的真空中生长,然后在573K ~ 873K的空气中退火。用XRD分析了薄膜的结晶度。发现薄膜本质上是多晶的,结晶为具有优选(222)取向的立方结构。利用扫描电镜(SEM)研究了膜的表面形貌,并用能谱仪(EDS)测定了膜的化学成分。这些薄膜的光学透明度随退火温度的变化而变化,在673K时透射率最大。膜的厚度为918nm。光学带隙也随退火温度的变化而变化。在激发波长为350nm处拍摄PL发射光谱。在室温下,In2O3薄膜在紫外区显示出PL发射,这有利于未来纳米器件的发展。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Structural and optical characterization of indium oxide thin films by vacuum thermal evaporation
Indium oxide of purity 99.99% powder was used as starting material for the preparation of Indium oxide thin films using vacuum thermal evaporation technique. Ultrasonically cleaned and dried glass substrates were used for deposition of In2O3 thin films. Films were grown in vacuum of 3×10-5mbar pressure followed by annealing in air in the temperature range 573K - 873K. The crystallinity of the films were investigated using XRD. The films were found to be polycrystalline in nature and crystallizes in a cubic structure with preferred (222) orientation. The surface morphology was investigated for these films using Scanning Electron Microscope (SEM) and chemical composition of the films was estimated using EDS. The Optical transparency of these films was found to be varying with annealing temperature and at 673K the transmittance was found to be maximum. Thickness of the films was found to be 918nm. The optical band gap was also varying with annealing temperature. The PL emission spectra were taken at excitation wave length of 350nm. In2O3 thin films shown PL emission in the UV region at room temperature, which encourages development of nano scale devices in future.
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