+金属前驱体H2Se/Ar/H2S三步反应,大面积Cu(In,Ga)(Se,S)2,Ga分布均匀

Kihwan Kim, Evan Kimberly, Andrew Damiani, G. Hanket, W. Shafarman
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引用次数: 1

摘要

采用H2Se/Ar/H2S三步反应处理Cu-In-Ga金属前驱体,在10 × 10 cm2的衬底上形成Cu(In,Ga)(Se,S)2薄膜。第一步硒化得到了良好的微观结构,在Mo背触点附近有Ga积累,主要是Cu9Ga4相。通过第二步氩退火,晶粒生长明显,且Ga分布均匀。第三步磺化完成反应过程,在Cu(In,Ga)Se2表面附近加入S。所得薄膜具有良好的附着力,制备出η = 14.8%, VOC = 612 mV的器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
+Three-step H2Se/Ar/H2S reaction of metal precursors for large area Cu(In,Ga)(Se,S)2 with uniform Ga distribution
A three-step H2Se/Ar/H2S reaction is used to process Cu-In-Ga metal precursors to form Cu(In,Ga)(Se,S)2 films over 10 × 10 cm2 substrates. The 1st selenization step gives fine microstructure with Ga accumulation near the Mo back contact, primarily in a Cu9Ga4 phase. Significant grain growth with homogenous through-film Ga distribution is obtained by the 2nd Ar annealing step. The 3rd sulfization step completes the reaction process and incorporates S near the Cu(In,Ga)Se2 surface. The resulting films show good adhesion and yielded devices with η = 14.8% and VOC = 612 mV.
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