+金属前驱体H2Se/Ar/H2S三步反应，大面积Cu(In,Ga)(Se,S)2,Ga分布均匀

2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2 Pub Date : 2013-01-01 DOI:10.1109/pvsc-vol2.2012.6656716

Kihwan Kim, Evan Kimberly, Andrew Damiani, G. Hanket, W. Shafarman

{"title":"+金属前驱体H2Se/Ar/H2S三步反应，大面积Cu(In,Ga)(Se,S)2,Ga分布均匀","authors":"Kihwan Kim, Evan Kimberly, Andrew Damiani, G. Hanket, W. Shafarman","doi":"10.1109/pvsc-vol2.2012.6656716","DOIUrl":null,"url":null,"abstract":"A three-step H<inf>2</inf>Se/Ar/H<inf>2</inf>S reaction is used to process Cu-In-Ga metal precursors to form Cu(In,Ga)(Se,S)<inf>2</inf> films over 10 × 10 cm2 substrates. The 1st selenization step gives fine microstructure with Ga accumulation near the Mo back contact, primarily in a Cu<inf>9</inf>Ga<inf>4</inf> phase. Significant grain growth with homogenous through-film Ga distribution is obtained by the 2nd Ar annealing step. The 3rd sulfization step completes the reaction process and incorporates S near the Cu(In,Ga)Se<inf>2</inf> surface. The resulting films show good adhesion and yielded devices with η = 14.8% and V<inf>OC</inf> = 612 mV.","PeriodicalId":6420,"journal":{"name":"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"+Three-step H2Se/Ar/H2S reaction of metal precursors for large area Cu(In,Ga)(Se,S)2 with uniform Ga distribution\",\"authors\":\"Kihwan Kim, Evan Kimberly, Andrew Damiani, G. Hanket, W. Shafarman\",\"doi\":\"10.1109/pvsc-vol2.2012.6656716\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A three-step H<inf>2</inf>Se/Ar/H<inf>2</inf>S reaction is used to process Cu-In-Ga metal precursors to form Cu(In,Ga)(Se,S)<inf>2</inf> films over 10 × 10 cm2 substrates. The 1st selenization step gives fine microstructure with Ga accumulation near the Mo back contact, primarily in a Cu<inf>9</inf>Ga<inf>4</inf> phase. Significant grain growth with homogenous through-film Ga distribution is obtained by the 2nd Ar annealing step. The 3rd sulfization step completes the reaction process and incorporates S near the Cu(In,Ga)Se<inf>2</inf> surface. The resulting films show good adhesion and yielded devices with η = 14.8% and V<inf>OC</inf> = 612 mV.\",\"PeriodicalId\":6420,\"journal\":{\"name\":\"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/pvsc-vol2.2012.6656716\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/pvsc-vol2.2012.6656716","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

采用H2Se/Ar/H2S三步反应处理Cu-In-Ga金属前驱体，在10 × 10 cm2的衬底上形成Cu(In,Ga)(Se,S)2薄膜。第一步硒化得到了良好的微观结构，在Mo背触点附近有Ga积累，主要是Cu9Ga4相。通过第二步氩退火，晶粒生长明显，且Ga分布均匀。第三步磺化完成反应过程，在Cu(In,Ga)Se2表面附近加入S。所得薄膜具有良好的附着力，制备出η = 14.8%， VOC = 612 mV的器件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

+Three-step H2Se/Ar/H2S reaction of metal precursors for large area Cu(In,Ga)(Se,S)2 with uniform Ga distribution

A three-step H2Se/Ar/H2S reaction is used to process Cu-In-Ga metal precursors to form Cu(In,Ga)(Se,S)2 films over 10 × 10 cm² substrates. The 1^st selenization step gives fine microstructure with Ga accumulation near the Mo back contact, primarily in a Cu9Ga4 phase. Significant grain growth with homogenous through-film Ga distribution is obtained by the 2^nd Ar annealing step. The 3^rd sulfization step completes the reaction process and incorporates S near the Cu(In,Ga)Se2 surface. The resulting films show good adhesion and yielded devices with η = 14.8% and VOC = 612 mV.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2

自引率

0.00%

发文量