多晶钆在4 ~ 375°K范围内的电阻率

R. V. Colvin, S. Arajs
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引用次数: 19

摘要

研究了残余电阻率约为2.4 μ OMEGA的高纯多晶钆的电阻率随温度在4 ~ 375℃之间的变化规律,在5 ~ 15℃之间,其电阻率与T/sup n/成正比,n = 3.73±0.03。这个值接近Mackintosh根据线性自旋波色散定律提出的磁电阻率的理论期望温度依赖性T/sup 4/。210°K附近的电阻率没有显示出任何异常类型,可以明确支持Belov和他的同事提出的铁磁-反铁磁转换的存在。在居里温度(293±1℃)下的详细电阻率行为表明,材料从铁磁状态逐渐过渡到顺磁状态。(认证)
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrical Resistivity of Polycrystalline Gadolinium from 4 to 375 °K
Electrical resistivity of high purity polycrystalline gadolinium, with a residual resistivity of about 2.4 mu OMEGA , was studied as a function of temperature between 4 and 375 deg K. Between 5 and 15 deg K, the intrinsic resistivity was proportional to T/sup n/ with n = 3.73 plus or minus 0.03. This value was close to the theoretically expected temperature dependence, T/sup 4/, of the magnetic resistivity as suggested by Mackintosh on the basis of a linear spin wave dispersion law. The electrical resistivity in the neighborhood of 210 deg K did not exhibit any anomaly of the type that would clearly support the existence of the ferromagnetic-antiferromagnetic transformation proposed by Belov and his co-workers. The detailed resistivity behavior at the Curie temperature, 293 plus or minus 1 deg K, indicated a gradual transition from the ferromagnetic to the paramagnetic state. (auth)
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