{"title":"硅无线电集成:架构和技术:从笛卡尔零中频接收和发射到极零I和Q,从硅双极到体和SOI CMOS","authors":"J. Sevenhans","doi":"10.1109/CICC.2000.852679","DOIUrl":null,"url":null,"abstract":"During the nineties we have witnessed a string of advances in Silicon RF integration: from the introduction of the first integrated Si bipolar radios for GSM and DECT in the late eighties to the full single chip integration capabilities today using SiGe BiCMOS technologies. Where RF design used to be a black art, it is becoming a \"normal practice\" today.","PeriodicalId":20702,"journal":{"name":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2000-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Silicon radio integration: architectures and technology: from cartesian zero IF receive & transmit to polar zero I and Q, from silicon bipolar to bulk and SOI CMOS\",\"authors\":\"J. Sevenhans\",\"doi\":\"10.1109/CICC.2000.852679\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"During the nineties we have witnessed a string of advances in Silicon RF integration: from the introduction of the first integrated Si bipolar radios for GSM and DECT in the late eighties to the full single chip integration capabilities today using SiGe BiCMOS technologies. Where RF design used to be a black art, it is becoming a \\\"normal practice\\\" today.\",\"PeriodicalId\":20702,\"journal\":{\"name\":\"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.2000.852679\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2000.852679","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Silicon radio integration: architectures and technology: from cartesian zero IF receive & transmit to polar zero I and Q, from silicon bipolar to bulk and SOI CMOS
During the nineties we have witnessed a string of advances in Silicon RF integration: from the introduction of the first integrated Si bipolar radios for GSM and DECT in the late eighties to the full single chip integration capabilities today using SiGe BiCMOS technologies. Where RF design used to be a black art, it is becoming a "normal practice" today.