在深亚微米器件中通过二次冲击电离产生热载流子:模型和光发射特性

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-04-10 DOI:10.1109/RELPHY.2000.843896

B. Marchand, D. Blachier, C. Leroux, G. Ghibaudo, F. Balestra, G. Reimbold

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引用次数: 5

摘要

本文对二次冲击电离现象进行了深入的研究。在考虑衬底偏置和温度影响的情况下，提出了一种简单准确的深亚微米MOS器件栅极电流解析模型。并首次对相关的光发射进行了分析。光谱分析显示可以单独观察第一次和第二次撞击电离。二次电离与衬底电流有关。讨论了光子的起源。

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Generation of hot carriers by secondary impact ionization in deep submicron devices: model and light emission characterization

This paper gives a deep insight on the secondary impact ionization phenomenon. A simple and accurate analytical model of the gate current in deep sub-micron MOS devices is presented, taking into account the substrate bias and the temperature influence. Also for the first time, the related light emission is analyzed. The spectrum analysis is shown to allow individual observation of both first and secondary impact ionizations. Secondary ionization is shown to correlate to substrate current. The photon origin is discussed.

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来源期刊

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)

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