镓铟基氧化物和砷化纳米颗粒的微生物毒性

Chi H. Nguyen, J. Field, R. Sierra-Alvarez
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引用次数: 13

摘要

砷化镓(GaAs)和砷化铟(InAs)等III-V半导体材料在电子器件制造中的应用日益广泛。人们越来越关注这些物质可能释放到环境中,从而对公众和环境健康产生影响。化学机械平面化过程产生的废水会对生物废水处理系统中的微生物产生影响。目前,关于镓和铟纳米颗粒(NPs)对微生物的抑制作用的信息有限。本研究利用两种针对产甲烷古细菌和海洋细菌费氏阿里弧菌的微生物抑制试验,评估了GaAs、InAs、氧化镓(Ga2O3)和氧化铟(In2O3)颗粒的急性毒性。GaAs和InAs NPs对这些微生物具有急性毒性;Ga2O3和In2O3 NPs则没有。毒性效应主要是由于可溶性砷的释放,随着粒径的减小和时间的延长,毒性效应增加,这是由于NPs在水溶生物测定介质中的逐渐腐蚀。总的来说,结果表明砷化NPs在环境条件下的毒性将取决于材料的固有性质,如粒径、溶解时间和水化学。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Microbial toxicity of gallium- and indium-based oxide and arsenide nanoparticles
Abstract III-V semiconductor materials such as gallium arsenide (GaAs) and indium arsenide (InAs) are increasingly used in the fabrication of electronic devices. There is a growing concern about the potential release of these materials into the environment leading to effects on public and environmental health. The waste effluents from the chemical mechanical planarization process could impact microorganisms in biological wastewater treatment systems. Currently, there is only limited information about the inhibition of gallium- and indium-based nanoparticles (NPs) on microorganisms. This study evaluated the acute toxicity of GaAs, InAs, gallium oxide (Ga2O3), and indium oxide (In2O3) particulates using two microbial inhibition assays targeting methanogenic archaea and the marine bacterium, Aliivibrio fischeri. GaAs and InAs NPs were acutely toxic towards these microorganisms; Ga2O3 and In2O3 NPs were not. The toxic effect was mainly due to the release of soluble arsenic species and it increased with decreasing particle size and with increasing time due to the progressive corrosion of the NPs in the aqueous bioassay medium. Collectively, the results indicate that the toxicity exerted by the arsenide NPs under environmental conditions will vary depending on intrinsic properties of the material such as particle size as well as on the dissolution time and aqueous chemistry.
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