T. Scheike, Q. Xiang, Z. Wen, H. Sukegawa, T. Ohkubo, K. Hono, S. Mitani
{"title":"室温下外延Fe/MgO/Fe(001)自旋阀型磁隧道结的磁阻超过400%","authors":"T. Scheike, Q. Xiang, Z. Wen, H. Sukegawa, T. Ohkubo, K. Hono, S. Mitani","doi":"10.1063/5.0037972","DOIUrl":null,"url":null,"abstract":"Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT) and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biased spin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions for each layer, combining sputter deposition for the Fe layers, electron-beam evaporation of the MgO barrier, and barrier interface tuning. Clear TMR oscillation as a function of the MgO thickness with a large peak-to-valley difference of ~80% was observed when the layers were grown on a highly (001)-oriented Cr buffer layer. Specific features of the observed MTJs are symmetric differential conductance (dI/dV) spectra for the bias polarity and plateau-like deep local minima in dI/dV (parallel configuration) at |V| = 0.2~0.5 V. At 3K, fine structures with two dips emerge in the plateau-like dI/dV, reflecting highly coherent tunneling through the Fe/MgO/Fe. We also observed a 496% TMR ratio at RT by a 2.24-nm-thick-CoFe insertion at the bottom-Fe/MgO interface.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2020-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions\",\"authors\":\"T. Scheike, Q. Xiang, Z. Wen, H. Sukegawa, T. Ohkubo, K. Hono, S. Mitani\",\"doi\":\"10.1063/5.0037972\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT) and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biased spin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions for each layer, combining sputter deposition for the Fe layers, electron-beam evaporation of the MgO barrier, and barrier interface tuning. Clear TMR oscillation as a function of the MgO thickness with a large peak-to-valley difference of ~80% was observed when the layers were grown on a highly (001)-oriented Cr buffer layer. Specific features of the observed MTJs are symmetric differential conductance (dI/dV) spectra for the bias polarity and plateau-like deep local minima in dI/dV (parallel configuration) at |V| = 0.2~0.5 V. At 3K, fine structures with two dips emerge in the plateau-like dI/dV, reflecting highly coherent tunneling through the Fe/MgO/Fe. We also observed a 496% TMR ratio at RT by a 2.24-nm-thick-CoFe insertion at the bottom-Fe/MgO interface.\",\"PeriodicalId\":8467,\"journal\":{\"name\":\"arXiv: Materials Science\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-11-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"arXiv: Materials Science\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0037972\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"arXiv: Materials Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/5.0037972","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions
Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT) and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biased spin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions for each layer, combining sputter deposition for the Fe layers, electron-beam evaporation of the MgO barrier, and barrier interface tuning. Clear TMR oscillation as a function of the MgO thickness with a large peak-to-valley difference of ~80% was observed when the layers were grown on a highly (001)-oriented Cr buffer layer. Specific features of the observed MTJs are symmetric differential conductance (dI/dV) spectra for the bias polarity and plateau-like deep local minima in dI/dV (parallel configuration) at |V| = 0.2~0.5 V. At 3K, fine structures with two dips emerge in the plateau-like dI/dV, reflecting highly coherent tunneling through the Fe/MgO/Fe. We also observed a 496% TMR ratio at RT by a 2.24-nm-thick-CoFe insertion at the bottom-Fe/MgO interface.
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