Yield and NPK Uptake of Rice as Influenced by Si Fertilization under Ambient and Elevated Temperature

Application of silicon (Si) influences the stress resistance, and thereby could boost up the growth and yield of rice. An experiment was conducted to investigate the effect of Si fertilization on rice cv. Binadhan-8 at ambient and elevated temperature during Boro season of Bangladesh. Significant differences were observed in the studied parameters: plant height, SPAD reading, yield and concentration of NPK in grain and straw of rice. At ambient temperature (AMT) condition, plant height, SPAD reading, grain and straw yield were also the highest in case of 10 g pot-1 Si application. Moreover, the highest NPK contents in grain and straw were observed in the application of Si @ 10 g pot-1, whereas the lowest NPK contents were mostly recorded in control (0 g Si pot-1). The increased rate of Si contributed to the NPK absorption in grain, yield attributes and yield of rice up to 10g pot-1 Si application. On the other hand, yield contributing characters, grain yield and NPK uptake were showed a similar response to Si application at elevated temperature (ELT). But, the yield contributing characters as well as grain yield at ELT showed less performance in comparison to AMT. Therefore, the application of Si could be recommended to optimize the yield attributes, yield and NPK uptake of rice.