厚膜金属化通路的载流能力

A. Dąbrowski, Radosław Wilkosz
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引用次数: 0

摘要

本文介绍了测量厚膜金属化电流强度的实验结果。对银、银钯和铜制成的商业厚膜浆料进行了测试。这些层被丝网印刷在Al2O3和AlN陶瓷衬底上。测定了电阻随电流密度的变化规律,进而确定了击穿时的最大电流密度。通道中的电流密度受限于热从层通过基板携带到散热器的能力。由于AlN基陶瓷具有比氧化铝基板更好的导热性,因此有望获得更好的电流密度临界值。然而,更高的导热系数并不总是意味着更高的最大电流密度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Current-Carrying Capacity of Thick-Film Metallization Paths
In this work the results of experimental results on measuring the current strength of thick-film metallization are described. The tests were performed for paths made of commercial thick film pastes based on silver, silver-palladium and copper. The layers were screen printed on Al2O3 and AlN ceramic substrates. Resistance changes were determined as function of current density through the paths and then the maximum current density at burnout was determined. The current density in the paths was limited by ability of heat carrying away from the layer through the substrate to a heatsink. The AlN based ceramic was expected to achieve much better critical values of the current density thanks to its better thermal conductivity than alumina substrates. However, higher thermal conductivity of the substrate has not always meant significantly higher maximum current density.
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