S. E. H. Amiri, P. Ranga, D. Y. Li, F. Fan, C. Ning
{"title":"在硅衬底上生长具有宽可调带隙的InGaP合金纳米线","authors":"S. E. H. Amiri, P. Ranga, D. Y. Li, F. Fan, C. Ning","doi":"10.1364/CLEO_SI.2017.STH3I.4","DOIUrl":null,"url":null,"abstract":"InGaP alloy nanowires with In-composition continuously varying from 12% to 73% are demonstrated using chemical vapor deposition on a single silicon substrate, corresponding peak of photoluminescence changing from 580 nm to 780 nm.","PeriodicalId":6652,"journal":{"name":"2017 Conference on Lasers and Electro-Optics (CLEO)","volume":"2204 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Growth of InGaP alloy nanowires with widely tunable bandgaps on silicon substrates\",\"authors\":\"S. E. H. Amiri, P. Ranga, D. Y. Li, F. Fan, C. Ning\",\"doi\":\"10.1364/CLEO_SI.2017.STH3I.4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"InGaP alloy nanowires with In-composition continuously varying from 12% to 73% are demonstrated using chemical vapor deposition on a single silicon substrate, corresponding peak of photoluminescence changing from 580 nm to 780 nm.\",\"PeriodicalId\":6652,\"journal\":{\"name\":\"2017 Conference on Lasers and Electro-Optics (CLEO)\",\"volume\":\"2204 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Conference on Lasers and Electro-Optics (CLEO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/CLEO_SI.2017.STH3I.4\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Conference on Lasers and Electro-Optics (CLEO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/CLEO_SI.2017.STH3I.4","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Growth of InGaP alloy nanowires with widely tunable bandgaps on silicon substrates
InGaP alloy nanowires with In-composition continuously varying from 12% to 73% are demonstrated using chemical vapor deposition on a single silicon substrate, corresponding peak of photoluminescence changing from 580 nm to 780 nm.
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