Электропроводность и интерфейсные явления в тонкопленочных гетероструктурах на основе ниобата лития и танталата лития

In this work, the electrophysical properties of metal-ferroelectric-semiconductor structures – Cu/LiNbO₃/Si and Ag/LiTaO₃/Si – with a ferroelectric layer thickness of 200 nm have been studied. The ferroelectric layers were deposited by RF‐magnetron sputtering. A topography study of thin film surface revealed a grain structure. The electrical conductivity mechanisms in Cu/LiNbO₃/Si and Ag/LiTaO₃/Si were considered. In a dependence of bias voltage value, there are a space charge-limited current, hopping conduction, and Schottky emission in Cu/LiNbO₃/Si structures. For Ag/LiTaO₃/Si structures, the space charge-limited current and hopping conduction were observed. An asymmetry of the current-voltage characteristics may indicate the presence of a potential barrier at the interface. For the studied structures, the value of the potential barrier was determined.