M. Klee, U. Mackens, R. Kiewitt, G. Greuel, C. Metzmacher
{"title":"集成无源元件用铁电薄膜","authors":"M. Klee, U. Mackens, R. Kiewitt, G. Greuel, C. Metzmacher","doi":"10.1016/S0165-5817(98)00016-3","DOIUrl":null,"url":null,"abstract":"<div><p>Miniaturisation and integration of passive components play an important role in today's components market. It can be achieved by applying thin-film technologies for capacitors, resistors and inductors; high component densities have been realised with ‘Passive Only Networks’. The dielectric materials used for integrated thin-film capacitors ranging from Si<sub>3</sub>N<sub>4</sub>, Ta<sub>2</sub>O<sub>5</sub>, TiO<sub>2</sub> to earth alkaline as well as lead perovskite layers are reviewed. The capacitor performances including temperature stability, insulation resistance, breakdown fields and endurance are discussed as a function of material composition.</p></div>","PeriodicalId":101018,"journal":{"name":"Philips Journal of Research","volume":"51 3","pages":"Pages 363-387"},"PeriodicalIF":0.0000,"publicationDate":"1998-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S0165-5817(98)00016-3","citationCount":"20","resultStr":"{\"title\":\"Ferroelectric thin films for integrated passive components\",\"authors\":\"M. Klee, U. Mackens, R. Kiewitt, G. Greuel, C. Metzmacher\",\"doi\":\"10.1016/S0165-5817(98)00016-3\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Miniaturisation and integration of passive components play an important role in today's components market. It can be achieved by applying thin-film technologies for capacitors, resistors and inductors; high component densities have been realised with ‘Passive Only Networks’. The dielectric materials used for integrated thin-film capacitors ranging from Si<sub>3</sub>N<sub>4</sub>, Ta<sub>2</sub>O<sub>5</sub>, TiO<sub>2</sub> to earth alkaline as well as lead perovskite layers are reviewed. The capacitor performances including temperature stability, insulation resistance, breakdown fields and endurance are discussed as a function of material composition.</p></div>\",\"PeriodicalId\":101018,\"journal\":{\"name\":\"Philips Journal of Research\",\"volume\":\"51 3\",\"pages\":\"Pages 363-387\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/S0165-5817(98)00016-3\",\"citationCount\":\"20\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Philips Journal of Research\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0165581798000163\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Philips Journal of Research","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0165581798000163","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ferroelectric thin films for integrated passive components
Miniaturisation and integration of passive components play an important role in today's components market. It can be achieved by applying thin-film technologies for capacitors, resistors and inductors; high component densities have been realised with ‘Passive Only Networks’. The dielectric materials used for integrated thin-film capacitors ranging from Si3N4, Ta2O5, TiO2 to earth alkaline as well as lead perovskite layers are reviewed. The capacitor performances including temperature stability, insulation resistance, breakdown fields and endurance are discussed as a function of material composition.