准原子层蚀刻技术在高均匀性蚀刻中的应用

2020 China Semiconductor Technology International Conference (CSTIC) Pub Date : 2020-06-26 DOI:10.1109/CSTIC49141.2020.9282601

Y. Zhang, J. Chong, C. Wang, Q. Xie, D. Li

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引用次数: 0

摘要

介绍了基于电感耦合等离子体(ICP)刻蚀技术的准原子层刻蚀(Q-ALE)工艺。Q-ALE工艺可以解决一些传统等离子体刻蚀问题，如宽高比相关刻蚀(ARDE)效应。此外，在硅和化合物半导体的蚀刻应用中，Q-ALE工艺具有较低的表面粗糙度和较低的蚀刻损伤，具有较高的蚀刻均匀性。

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Quasi-Atomic Layer Etching Technology for High Uniformity Etching Applications

This paper illustrated Quasi-Atomic Layer Etching (Q-ALE) process, based on Inductively Coupled Plasma (ICP) etching technology. Q-ALE process could solve several conventional plasma etching issues, for instance, Aspect Ratio Dependent Etching (ARDE) effect. Furthermore, Q-ALE process could achieve relatively high etching uniformity with low surface roughness and low etching damage for silicon and compound semiconductors etching applications.

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2020 China Semiconductor Technology International Conference (CSTIC)

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