用于快速评估Flash技术的实用晶圆级阈值电压稳定性测量方法

2017 China Semiconductor Technology International Conference (CSTIC) Pub Date : 2017-03-01 DOI:10.1109/CSTIC.2017.7919852

G. Niu, W. Chien, Jack Chen, Dennis Zhang, Susie Yu, Daniel Zhao, Silvia Duan, Ming Li, Alicia Ding

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引用次数: 0

摘要

PMOS的封装级阈值电压稳定性(VTS)评估已成为深亚微米器件可靠性的关键问题之一。本文提出了一种在晶圆级快速测量VTS的新方法。结果表明，改变源源/漏源IMP种类可以提高0.13um闪光的VTS。

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Practical wafer Level Threshold Voltage Stability measurement methodology for the fast evaluation of Flash technology

Package Level Threshold Voltage Stability (VTS) evaluation on PMOS has emerged as one of the critical reliability concerns in deep sub-micron devices. In this paper, we present a novel method to fast measure VTS at wafer level. Our result shows that changing the Source/Drain IMP species can improve the VTS of a 0.13um Flash.

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2017 China Semiconductor Technology International Conference (CSTIC)

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