新千年的硅技术方向

T. Ning
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引用次数: 8

摘要

硅技术的发展正处于十字路口,尽管它在过去的三十多年里取得了指数级的进步。现在很明显,传统的CMOS器件正在迅速接近性能饱和和密度饱和。尽管如此,CMOS仍将是硅技术在特定应用方向上未来发展的数字逻辑技术平台。除了进一步优化CMOS缩放速度和密度外,还将重点放在低功耗,可编程性,RF和模拟功能以及这些功能与数字CMOS的芯片级集成上。技术挑战是艰巨的,但这些发展所带来的应用机会将为推动硅技术的发展提供动力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Silicon technology directions in the new millennium
Silicon technology development is at a crossroad, in spite of its exponential rate of progress for more than thirty years. It is now clear that traditional CMOS devices are fast approaching both performance saturation and density saturation. Nonetheless, CMOS will remain the digital logic technology platform for future evolution of silicon technology in application-specific directions. Besides optimizing CMOS scaling further for speed and density, there will be additional emphases placed upon low power dissipation, on programmability, RF and analog functions, and on the chip-scale integration of these functions with digital CMOS. The technical challenges are formidable, but the application opportunities enabled by these developments will provide the incentive for driving the development of silicon technology forward.
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