Jiho Joo, Sanghoon Kim, I. Kim, Ki-seok Jang, Gyungock Kim
{"title":"λ ~ 1.55µm高响应垂直照明型锗硅光电探测器的研究进展","authors":"Jiho Joo, Sanghoon Kim, I. Kim, Ki-seok Jang, Gyungock Kim","doi":"10.1364/OFC.2011.OWZ7","DOIUrl":null,"url":null,"abstract":"We present a vertical-illumination-type 100% Ge-on-Si photodetector with the responsivity up to 0.93 A/W at λ∼1.55 µm. The 10Gbps photoreceiver with a fabricated 60 µm-diameter device exhibits high sensitivity of −19.5 dBm for λ∜1.55 µm.","PeriodicalId":6373,"journal":{"name":"2011 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Progress in high-responsivity vertical-illumination type Ge-on-Si photodetecor operating at λ ∼1.55 µm\",\"authors\":\"Jiho Joo, Sanghoon Kim, I. Kim, Ki-seok Jang, Gyungock Kim\",\"doi\":\"10.1364/OFC.2011.OWZ7\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a vertical-illumination-type 100% Ge-on-Si photodetector with the responsivity up to 0.93 A/W at λ∼1.55 µm. The 10Gbps photoreceiver with a fabricated 60 µm-diameter device exhibits high sensitivity of −19.5 dBm for λ∜1.55 µm.\",\"PeriodicalId\":6373,\"journal\":{\"name\":\"2011 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-03-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/OFC.2011.OWZ7\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/OFC.2011.OWZ7","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
摘要
我们提出了一种垂直照明型100% Ge-on-Si光电探测器,在λ ~ 1.55µm下的响应度高达0.93 a /W。采用直径60µm器件的10Gbps光接收器在λ∜1.55µm下具有−19.5 dBm的高灵敏度。
Progress in high-responsivity vertical-illumination type Ge-on-Si photodetecor operating at λ ∼1.55 µm
We present a vertical-illumination-type 100% Ge-on-Si photodetector with the responsivity up to 0.93 A/W at λ∼1.55 µm. The 10Gbps photoreceiver with a fabricated 60 µm-diameter device exhibits high sensitivity of −19.5 dBm for λ∜1.55 µm.