{"title":"半导体异质结构中的红外自旋取向和自旋电偶效应","authors":"S. Ganichev, W. Prettl","doi":"10.1109/ICIMW.2002.1076214","DOIUrl":null,"url":null,"abstract":"It is shown that a homogeneous spin-polarized electron gas in semiconductor heterostructures can drive an electric current. Here we report on this spin-galvanic effect where the spin polarization has been achieved by optical orientation applying circularly polarized far-infrared laser radiation. The microscopic origin-of the effect is an inherent asymmetry of spin-flip scattering.","PeriodicalId":23431,"journal":{"name":"Twenty Seventh International Conference on Infrared and Millimeter Waves","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Infrared spin orientation and spin-galvanic effect in semiconductor heterostructures\",\"authors\":\"S. Ganichev, W. Prettl\",\"doi\":\"10.1109/ICIMW.2002.1076214\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It is shown that a homogeneous spin-polarized electron gas in semiconductor heterostructures can drive an electric current. Here we report on this spin-galvanic effect where the spin polarization has been achieved by optical orientation applying circularly polarized far-infrared laser radiation. The microscopic origin-of the effect is an inherent asymmetry of spin-flip scattering.\",\"PeriodicalId\":23431,\"journal\":{\"name\":\"Twenty Seventh International Conference on Infrared and Millimeter Waves\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Twenty Seventh International Conference on Infrared and Millimeter Waves\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIMW.2002.1076214\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Twenty Seventh International Conference on Infrared and Millimeter Waves","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIMW.2002.1076214","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Infrared spin orientation and spin-galvanic effect in semiconductor heterostructures
It is shown that a homogeneous spin-polarized electron gas in semiconductor heterostructures can drive an electric current. Here we report on this spin-galvanic effect where the spin polarization has been achieved by optical orientation applying circularly polarized far-infrared laser radiation. The microscopic origin-of the effect is an inherent asymmetry of spin-flip scattering.