等离子沉积法制备纳米/介观结构硅薄膜

William W. Hernández-Montero, C. Zuñiga-Islas, F. J. D. L. Hidalga-Wade, W. Calleja-Arriaga, A. Itzmoyotl-Toxqui
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引用次数: 0

摘要

等离子体沉积的硅膜的特性很大程度上取决于反应器的参数。在我们的实验中,我们采用了两水平析因设计。硅膜合成的压力、硅烷流量和氢流量分别设定为高、低值。结果表明,硅烷和氢的流动是影响反应速率的关键因素。特别是在高氢浓度下,样品的沉积速率和光敏性最低。另一方面,低氢水平下的样品呈现出结晶区,沉积速率高。在最低稀释比下,得到纳米/介观结构硅薄膜,具有高光敏性和高粗糙度,增加了光的散射。这些特性使我们的薄膜适合用于光伏。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Synthesis of Nano/Meso-Structured Silicon Films by Plasma Deposition
The characteristics of silicon films deposited by plasma depend strongly on the reactor parameters. In our experiments, the two-level factorial design was implemented. Pressure, silane and hydrogen flows were set at high and low values for the synthesis of silicon films. Results showed that the flows of silane and hydrogen played a key role, being the influence of pressure low. In particular, the samples at high level of hydrogen exhibited the lowest deposition rate and photosensitivity. On the other hand, the samples at low level of hydrogen showed crystalline regions and high deposition rate. For the lowest dilution ratio, nano/meso-structured silicon films were obtained, showing high photosensitivity and high roughness that increases the scattering of light. These characteristics of our films make them suitable to be used in photovoltaics.
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