辛烷硫醇单层上二乙烯分子的光谱对比

A. Arramel, T. Kudernac, N. Katsonis, B. Feringa, B. Wees
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引用次数: 0

摘要

我们提出了一种系统的扫描隧道显微镜(STM)研究了室温下辛烷硫醇(C8)单层上二硫二乙烯(2S-DE)分子的偏置成像。在C8基质的刚性约束下,我们没有观察到2S-DE外观的任何显着变化。相反,当分子位于金空位岛上时,2S-DE的表观高度发生逆转。我们将这一发现归因于一种新的电子状态的存在,这种电子状态可以用于隧道事件。此外,当偏置电压从-825 mV降低到-425 mV时,C8表面结构经历了从根3 ×根3 R30度六边形到c(4x2)平方超晶格的可逆相变。在有限偏置电压下,首次证明了2S-DE特征的明显地形变化。这一发现可以归因于在尖端状态和2S-DE分子能级之间发生的相关波函数的有限重叠。我们认为,对固体表面有机分子偏置成像的物理认识对分子电子学器件的发展至关重要。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Spectroscopic Contrast of Diarylethene Molecules on Octanethiol Monolayer
We present a systematic scanning tunneling microscopy (STM) study of bias-dependent imaging of disulfur diarylethene (2S-DE) molecules on octanethiol (C8) monolayer at room temperature. In a rigid confinement of the C8 matrix, we did not observe any significant variation in the appearance of the 2S-DE. On the contrary, a reversal in the apparent height of the 2S-DE was present when the molecule was situated on a gold vacancy island. We attributed this finding to the presence of a new electronic state that became accessible for a tunneling event. In addition, the C8 surface structure underwent a reversible phase transformation from root 3 x root 3 R30 degrees hexagonal to c(4x2) square superlattice when the bias voltage was reduced from -825 mV to -425 mV or vice versa. Under a finite bias voltage, an appreciable topographic variation of the 2S-DE signature was demonstrated for the first time. This finding can be ascribed to a finite overlap of the associated wave functions that occurred between the tip state and the 2S-DE molecular energy level. We believe that physical insight on the bias-dependent imaging of organic molecules on solid surface is important towards the advancement of molecular electronics-based devices.
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