David J. McLaurin, K. Gard, Richard P. Schubert, M. Manglani, Haiyang Zhu, D. Alldred, Zhao Li, Steve Bal, Jianxun Fan, Oliver E. Gysel, Chris Mayer, T. Montalvo
{"title":"一款高度可重构的65nm CMOS射频到位收发器,适用于全频带多载波TDD/FDD 2G/3G/4G/5G宏基站","authors":"David J. McLaurin, K. Gard, Richard P. Schubert, M. Manglani, Haiyang Zhu, D. Alldred, Zhao Li, Steve Bal, Jianxun Fan, Oliver E. Gysel, Chris Mayer, T. Montalvo","doi":"10.1109/ISSCC.2018.8310234","DOIUrl":null,"url":null,"abstract":"This paper presents a 65nm 2-TX, 2-RX RF-to-bits basestation transceiver with 200MHz large-signal BW and 450MHz DPD synthesis/observation BW, and LO frequencies from 400MHz to 6GHz. For FDD operation the TRX supports a low-IF mode that meets the dynamic range requirements of GSM basestations. It provides full-band multicarrier (MC) operation in all TDD/FDD 3GPP bands for 2G/3G/4G/5G radios. The SoC includes an 8×16Gb/s SERDES interface, two receivers, two transmitters, and a digital pre-distortion (DPD) feedback RX (FBRX) (Fig. 9.3.1). The FBRX employs a “stitching” system that combines the outputs of both RX basebands to provide 450MHz of observation BW. Three PLLs provide the digital/converter/SERDES clocks, a calibration LO, and an RF LO that meets GSM TX phase-noise requirements. Digital interpolation, decimation, AGC, TX Power control, and calibrations are managed by an integrated ARM Cortex M3. Internal calibration timing is adaptable to support 3G/4G/5G subframe timing requirements. The SoC is a single-chip solution for TDD, and a two-chip set for FDD. GSM requires an external Lo for the RX. Power dissipation in the maximum BW mode (2T/2R/1FBRX, 450/200/450MHz, 0dB RF attenuation, 50% TX/RX duty cycle for TDD) is 4.1W for TDD and 6.6W for FDD.","PeriodicalId":6617,"journal":{"name":"2018 IEEE International Solid - State Circuits Conference - (ISSCC)","volume":"34 1 1","pages":"162-164"},"PeriodicalIF":0.0000,"publicationDate":"2018-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"28","resultStr":"{\"title\":\"A highly reconfigurable 65nm CMOS RF-to-bits transceiver for full-band multicarrier TDD/FDD 2G/3G/4G/5G macro basestations\",\"authors\":\"David J. McLaurin, K. Gard, Richard P. Schubert, M. Manglani, Haiyang Zhu, D. Alldred, Zhao Li, Steve Bal, Jianxun Fan, Oliver E. Gysel, Chris Mayer, T. Montalvo\",\"doi\":\"10.1109/ISSCC.2018.8310234\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a 65nm 2-TX, 2-RX RF-to-bits basestation transceiver with 200MHz large-signal BW and 450MHz DPD synthesis/observation BW, and LO frequencies from 400MHz to 6GHz. For FDD operation the TRX supports a low-IF mode that meets the dynamic range requirements of GSM basestations. It provides full-band multicarrier (MC) operation in all TDD/FDD 3GPP bands for 2G/3G/4G/5G radios. The SoC includes an 8×16Gb/s SERDES interface, two receivers, two transmitters, and a digital pre-distortion (DPD) feedback RX (FBRX) (Fig. 9.3.1). The FBRX employs a “stitching” system that combines the outputs of both RX basebands to provide 450MHz of observation BW. Three PLLs provide the digital/converter/SERDES clocks, a calibration LO, and an RF LO that meets GSM TX phase-noise requirements. Digital interpolation, decimation, AGC, TX Power control, and calibrations are managed by an integrated ARM Cortex M3. Internal calibration timing is adaptable to support 3G/4G/5G subframe timing requirements. The SoC is a single-chip solution for TDD, and a two-chip set for FDD. GSM requires an external Lo for the RX. Power dissipation in the maximum BW mode (2T/2R/1FBRX, 450/200/450MHz, 0dB RF attenuation, 50% TX/RX duty cycle for TDD) is 4.1W for TDD and 6.6W for FDD.\",\"PeriodicalId\":6617,\"journal\":{\"name\":\"2018 IEEE International Solid - State Circuits Conference - (ISSCC)\",\"volume\":\"34 1 1\",\"pages\":\"162-164\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"28\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Solid - State Circuits Conference - (ISSCC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2018.8310234\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Solid - State Circuits Conference - (ISSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2018.8310234","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A highly reconfigurable 65nm CMOS RF-to-bits transceiver for full-band multicarrier TDD/FDD 2G/3G/4G/5G macro basestations
This paper presents a 65nm 2-TX, 2-RX RF-to-bits basestation transceiver with 200MHz large-signal BW and 450MHz DPD synthesis/observation BW, and LO frequencies from 400MHz to 6GHz. For FDD operation the TRX supports a low-IF mode that meets the dynamic range requirements of GSM basestations. It provides full-band multicarrier (MC) operation in all TDD/FDD 3GPP bands for 2G/3G/4G/5G radios. The SoC includes an 8×16Gb/s SERDES interface, two receivers, two transmitters, and a digital pre-distortion (DPD) feedback RX (FBRX) (Fig. 9.3.1). The FBRX employs a “stitching” system that combines the outputs of both RX basebands to provide 450MHz of observation BW. Three PLLs provide the digital/converter/SERDES clocks, a calibration LO, and an RF LO that meets GSM TX phase-noise requirements. Digital interpolation, decimation, AGC, TX Power control, and calibrations are managed by an integrated ARM Cortex M3. Internal calibration timing is adaptable to support 3G/4G/5G subframe timing requirements. The SoC is a single-chip solution for TDD, and a two-chip set for FDD. GSM requires an external Lo for the RX. Power dissipation in the maximum BW mode (2T/2R/1FBRX, 450/200/450MHz, 0dB RF attenuation, 50% TX/RX duty cycle for TDD) is 4.1W for TDD and 6.6W for FDD.