采用无铅凸点的三维芯片堆叠封装热循环可靠性:有限元分析参数研究

C. Noritake, P. Limaye, M. Gonzalez, B. Vandevelde
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引用次数: 18

摘要

本研究旨在分析三维(3D)芯片堆叠封装在循环热载荷下的可靠性。利用有限元模拟方法确定了三维芯片堆叠封装中的关键区域,并与热循环实验相关联。3D芯片堆叠封装由两个300mum厚的Si芯片与Sn-Ag-Cu凸点垂直连接,然后组装在传统的FR-4印刷电路上(PCB)。研究了两种热循环条件:-40 ~ 125℃和0 ~ 100℃。有限元模拟表明,在这两种情况下,临界失效位置预计在连接封装和PCB的下芯片的角焊点的芯片侧区域。临界损伤体积上每单热循环的平均蠕变应变;Deltaepsivcr作为损伤参数。此外,我们还研究了提高该封装的热机械可靠性的可能方法。结果表明,添加下填料或减薄硅片可以降低焊点的蠕变应变。此外,硅晶片中的Si孔和Cu孔的应力水平较低。因此,在热循环条件下,硅片的断裂和铜孔的疲劳是预料不到的
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thermal Cycle Reliability of 3D Chip Stacked Package Using Pb-free Solder Bumps: Parameter Study by FEM Analysis
This study is aimed at analysing the reliability of a three-dimensional (3D) chip stacked package under cyclic thermal loading. The critical areas in the 3D chip stacked package are defined with finite element modeling (FEM) based simulations to correlate the thermal cycling experiments. The 3D chip stacked package consists of two 300mum thick Si chips vertically connected with Sn-Ag-Cu solder bump joints and then assembled on a conventional FR-4 printed circuit aboard (PCB). Two thermal cycle conditions are studied, namely: -40 to 125degC and 0 to 100degC. FEM simulations indicate that in both conditions, the critical failure location is expected to be in the chip side region of the corner solder bump of the lower chip connecting the package to the PCB. Creep strain per single thermal cycle averaged over a critical damage volume; Deltaepsivcr is used as the damage parameter. Furthermore, we have investigated the possible approaches to improve the thermo-mechanical reliability for this package. The results indicate that adding an underfill or thinning Si chips will achieve lower creep strain in solder bumps. Furthermore, the stress levels in Si and Cu via in the Si chip are low. Therefore fracture of Si chips and fatigue of Cu vias is not expected under thermal cycling conditions
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