{"title":"基于Silvaco Athena和MATLAB的MOS晶体管硼扩散算法","authors":"N. Guenifi, R. Mahamdi, I. Rahmani","doi":"10.1080/10426507.2017.1417305","DOIUrl":null,"url":null,"abstract":"GRAPHICAL ABSTRACT ABSTRACT In this paper we have developed an algorithm of boron diffusion after thermal annealing in a highly doped polysilicon film. This algorithm takes into account electrically active point defects by associating some parameters such as boron solubility limit and diffusion coefficient. We have studied effect of annealing temperature in order to perform impact of this parameter on maximum depth diffusion of junction and maximum of concentration by analysis of Secondary Ion Mass Spectrometry (SIMS) profiles. In fact we have proposed numerical model based on Fick's equation, resolved by finite difference method under Matlab also we have simulated this phenomenon by Silvaco software.","PeriodicalId":20043,"journal":{"name":"Phosphorus Sulfur and Silicon and The Related Elements","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2018-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"An algorithm for boron diffusion in MOS transistors using Silvaco Athena and MATLAB\",\"authors\":\"N. Guenifi, R. Mahamdi, I. Rahmani\",\"doi\":\"10.1080/10426507.2017.1417305\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GRAPHICAL ABSTRACT ABSTRACT In this paper we have developed an algorithm of boron diffusion after thermal annealing in a highly doped polysilicon film. This algorithm takes into account electrically active point defects by associating some parameters such as boron solubility limit and diffusion coefficient. We have studied effect of annealing temperature in order to perform impact of this parameter on maximum depth diffusion of junction and maximum of concentration by analysis of Secondary Ion Mass Spectrometry (SIMS) profiles. In fact we have proposed numerical model based on Fick's equation, resolved by finite difference method under Matlab also we have simulated this phenomenon by Silvaco software.\",\"PeriodicalId\":20043,\"journal\":{\"name\":\"Phosphorus Sulfur and Silicon and The Related Elements\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Phosphorus Sulfur and Silicon and The Related Elements\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1080/10426507.2017.1417305\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Phosphorus Sulfur and Silicon and The Related Elements","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1080/10426507.2017.1417305","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An algorithm for boron diffusion in MOS transistors using Silvaco Athena and MATLAB
GRAPHICAL ABSTRACT ABSTRACT In this paper we have developed an algorithm of boron diffusion after thermal annealing in a highly doped polysilicon film. This algorithm takes into account electrically active point defects by associating some parameters such as boron solubility limit and diffusion coefficient. We have studied effect of annealing temperature in order to perform impact of this parameter on maximum depth diffusion of junction and maximum of concentration by analysis of Secondary Ion Mass Spectrometry (SIMS) profiles. In fact we have proposed numerical model based on Fick's equation, resolved by finite difference method under Matlab also we have simulated this phenomenon by Silvaco software.
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