胶片和微导线的磁性和磁热效应

О. В. Коплак, С.H. Кашин, Д. В. Королев, М. В. Жидков, В.П. Пискорский, Р. А. Валеев, Роман Борисович Моргунов
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引用次数: 0

摘要

分析了Gd薄膜和微线磁化强度与温度和场的关系,并对居里温度下的熵的磁性部分进行了等温测量。磁热效应(MCE),以熵的磁性部分的等温增加来测量,在微线中,熵的磁性部分的温度依赖性有两个峰,而在薄膜中只有一个峰。在薄膜和微丝中,与居里温度对应的286-293 K处的熵最大值取决于磁场,随着MgO(111)衬底方向磁场的增加,薄膜和微丝中的熵值也以同样的方式发生变化,而MgO(111)衬底的方向提供了Gd中最大的机械应力。在微导线中,当电场增加到9 T时,第二次极大值并不改变320 K的温度,但其振幅随电场的增加而线性增加。这个最大值可能是由自旋重定向转变引起的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Магнитные свойства и магнитокалорический эффект в пленках и микропроводах Gd
An analysis of the temperature and field dependences of the magnetization of Gd films and microwires was carried out, as well as an isothermal measurement of the magnetic part of the entropy at the Curie temperature. The magnetocaloric effect (MCE), measured as an isothermal increase in the magnetic part of the entropy, in microwires shows two peaks on the temperature dependence of the magnetic part of the entropy, in contrast to one peak in films. In films and microwires, the entropy maximum at 286–293 K, which corresponds to the Curie temperature, depends on the magnetic field, shifting in the same way in films and microwires with an increase in the field at the orientation of the MgO (111) substrate, which provides the maximum mechanical stresses in Gd. In microwires, the second maximum does not change the temperature of 320 K as the field increases to 9 T, but its amplitude increases linearly with the field. This maximum can be caused by a spin-reorientation transition.
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