{"title":"多量子势垒纳米雪崩光电二极管。第一部分:光谱响应","authors":"Somrita Ghosh, A. Acharyya","doi":"10.2174/2210681208666180813123550","DOIUrl":null,"url":null,"abstract":"\n\nThe spectral response of Multiple Quantum Barrier (MQB) nano-scale\navalanche photodiodes (APDs) based on Si~3C-SiC material system shows considerable responsivity\nof the device within a very wide wavelength range which includes some portion of Ultra-\nViolet (UV) spectrum (200- 90 nm), visible spectrum (390-770 nm), near-infrared (700-1400 nm),\nshort-wavelength infrared (1400-3000 nm) and mid-infrared (3000-4000 nm) wavelengths. It has\nalready been concluded from preceding studies that Si~3C-SiC MQB APDs shows better spectral\nresponse and excess noise characteristics as compared to equivalent conventional APDs based on\nSi. Moreover, the superiority of the illumination through p+-side (ITPS) structure has been observed\namong two probable optical illumination configurations such as illumination through n+-\nside (ITNS) and illumination through p+-side (ITPS) structures.\n\n\n\nIn this paper, the time and frequency responses of Si~3C-SiC MQB APDs have been investigated.\nA very narrow rectangular pulse of pulse-width of 0.4 ps has been used as the input optical\npulse having 850 nm wavelength incident on the p+-side of the MQB APD structures (i.e. ITPS\nis considered here) and corresponding current responses have been calculated by using a rigorous\nsimulation method developed by the authors; finally the frequency responses of the devices are obtained\nvia the Fourier transform of the corresponding pulse current responses in time domain.\n\n\n\nThe width of the current responses are limited to 4.7 and 3.1 ps in Si nano-APD and\nSi~3C-SiC MQB (consisting of five quantum barriers) nano-APD respectively for the input optical\npulse of width 0.4 ps of 850 nm wavelength. On the other hand, the 3 dB upper cut-off frequencies\nof the above-mentioned diodes are obtained to be 68.63 and 82.64 GHz respectively.\n\n\n\nSimulation results show that MQB nano-APDs possess significantly faster time response\nand wider frequency response as compared to the flat Si nano-APDs under similar operating\nconditions.\n","PeriodicalId":18979,"journal":{"name":"Nanoscience & Nanotechnology-Asia","volume":"19 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2019-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Multiple Quantum Barrier Nano-avalanche Photodiodes - Part I: Spectral Response\",\"authors\":\"Somrita Ghosh, A. Acharyya\",\"doi\":\"10.2174/2210681208666180813123550\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n\\nThe spectral response of Multiple Quantum Barrier (MQB) nano-scale\\navalanche photodiodes (APDs) based on Si~3C-SiC material system shows considerable responsivity\\nof the device within a very wide wavelength range which includes some portion of Ultra-\\nViolet (UV) spectrum (200- 90 nm), visible spectrum (390-770 nm), near-infrared (700-1400 nm),\\nshort-wavelength infrared (1400-3000 nm) and mid-infrared (3000-4000 nm) wavelengths. It has\\nalready been concluded from preceding studies that Si~3C-SiC MQB APDs shows better spectral\\nresponse and excess noise characteristics as compared to equivalent conventional APDs based on\\nSi. Moreover, the superiority of the illumination through p+-side (ITPS) structure has been observed\\namong two probable optical illumination configurations such as illumination through n+-\\nside (ITNS) and illumination through p+-side (ITPS) structures.\\n\\n\\n\\nIn this paper, the time and frequency responses of Si~3C-SiC MQB APDs have been investigated.\\nA very narrow rectangular pulse of pulse-width of 0.4 ps has been used as the input optical\\npulse having 850 nm wavelength incident on the p+-side of the MQB APD structures (i.e. ITPS\\nis considered here) and corresponding current responses have been calculated by using a rigorous\\nsimulation method developed by the authors; finally the frequency responses of the devices are obtained\\nvia the Fourier transform of the corresponding pulse current responses in time domain.\\n\\n\\n\\nThe width of the current responses are limited to 4.7 and 3.1 ps in Si nano-APD and\\nSi~3C-SiC MQB (consisting of five quantum barriers) nano-APD respectively for the input optical\\npulse of width 0.4 ps of 850 nm wavelength. On the other hand, the 3 dB upper cut-off frequencies\\nof the above-mentioned diodes are obtained to be 68.63 and 82.64 GHz respectively.\\n\\n\\n\\nSimulation results show that MQB nano-APDs possess significantly faster time response\\nand wider frequency response as compared to the flat Si nano-APDs under similar operating\\nconditions.\\n\",\"PeriodicalId\":18979,\"journal\":{\"name\":\"Nanoscience & Nanotechnology-Asia\",\"volume\":\"19 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nanoscience & Nanotechnology-Asia\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.2174/2210681208666180813123550\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanoscience & Nanotechnology-Asia","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.2174/2210681208666180813123550","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Multiple Quantum Barrier Nano-avalanche Photodiodes - Part I: Spectral Response
The spectral response of Multiple Quantum Barrier (MQB) nano-scale
avalanche photodiodes (APDs) based on Si~3C-SiC material system shows considerable responsivity
of the device within a very wide wavelength range which includes some portion of Ultra-
Violet (UV) spectrum (200- 90 nm), visible spectrum (390-770 nm), near-infrared (700-1400 nm),
short-wavelength infrared (1400-3000 nm) and mid-infrared (3000-4000 nm) wavelengths. It has
already been concluded from preceding studies that Si~3C-SiC MQB APDs shows better spectral
response and excess noise characteristics as compared to equivalent conventional APDs based on
Si. Moreover, the superiority of the illumination through p+-side (ITPS) structure has been observed
among two probable optical illumination configurations such as illumination through n+-
side (ITNS) and illumination through p+-side (ITPS) structures.
In this paper, the time and frequency responses of Si~3C-SiC MQB APDs have been investigated.
A very narrow rectangular pulse of pulse-width of 0.4 ps has been used as the input optical
pulse having 850 nm wavelength incident on the p+-side of the MQB APD structures (i.e. ITPS
is considered here) and corresponding current responses have been calculated by using a rigorous
simulation method developed by the authors; finally the frequency responses of the devices are obtained
via the Fourier transform of the corresponding pulse current responses in time domain.
The width of the current responses are limited to 4.7 and 3.1 ps in Si nano-APD and
Si~3C-SiC MQB (consisting of five quantum barriers) nano-APD respectively for the input optical
pulse of width 0.4 ps of 850 nm wavelength. On the other hand, the 3 dB upper cut-off frequencies
of the above-mentioned diodes are obtained to be 68.63 and 82.64 GHz respectively.
Simulation results show that MQB nano-APDs possess significantly faster time response
and wider frequency response as compared to the flat Si nano-APDs under similar operating
conditions.