多量子势垒纳米雪崩光电二极管。第一部分:光谱响应

Somrita Ghosh, A. Acharyya
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引用次数: 3

摘要

基于Si~3C-SiC材料体系的多量子势垒(MQB)纳米雪崩光电二极管(apd)的光谱响应表明,该器件在非常宽的波长范围内具有相当高的响应性,包括紫外线(UV)光谱(200 ~ 90nm)、可见光谱(390 ~ 770 nm)、近红外(700 ~ 1400 nm)、短波红外(1400 ~ 3000 nm)和中红外(3000 ~ 4000 nm)波长的一部分。从以往的研究中已经得出结论,Si~3C-SiC MQB apd与基于Si的等效传统apd相比,具有更好的光谱响应和多余噪声特性。此外,在n+侧(ITNS)和p+侧(ITPS)两种可能的光学照明结构中,观察到p+侧(ITPS)结构的照明优势。本文研究了Si~3C-SiC MQB apd的时间和频率响应。采用脉冲宽度为0.4 ps的极窄矩形脉冲作为850 nm波长的输入光脉冲,入射到MQB APD结构(即本文所考虑的itpsi)的p+侧,并使用作者开发的严格模拟方法计算了相应的电流响应;最后通过脉冲电流响应在时域的傅里叶变换得到器件的频率响应。在850 nm波长、宽度为0.4 ps的输入光脉冲下,Si纳米apd和Si~3C-SiC MQB(由5个量子势垒组成)纳米apd的电流响应宽度分别限制在4.7和3.1 ps。另一方面,上述二极管的3db上限截止频率分别为68.63和82.64 GHz。仿真结果表明,在相同的工作条件下,MQB纳米apd比扁平Si纳米apd具有更快的时间响应和更宽的频率响应。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Multiple Quantum Barrier Nano-avalanche Photodiodes - Part I: Spectral Response
The spectral response of Multiple Quantum Barrier (MQB) nano-scale avalanche photodiodes (APDs) based on Si~3C-SiC material system shows considerable responsivity of the device within a very wide wavelength range which includes some portion of Ultra- Violet (UV) spectrum (200- 90 nm), visible spectrum (390-770 nm), near-infrared (700-1400 nm), short-wavelength infrared (1400-3000 nm) and mid-infrared (3000-4000 nm) wavelengths. It has already been concluded from preceding studies that Si~3C-SiC MQB APDs shows better spectral response and excess noise characteristics as compared to equivalent conventional APDs based on Si. Moreover, the superiority of the illumination through p+-side (ITPS) structure has been observed among two probable optical illumination configurations such as illumination through n+- side (ITNS) and illumination through p+-side (ITPS) structures. In this paper, the time and frequency responses of Si~3C-SiC MQB APDs have been investigated. A very narrow rectangular pulse of pulse-width of 0.4 ps has been used as the input optical pulse having 850 nm wavelength incident on the p+-side of the MQB APD structures (i.e. ITPS is considered here) and corresponding current responses have been calculated by using a rigorous simulation method developed by the authors; finally the frequency responses of the devices are obtained via the Fourier transform of the corresponding pulse current responses in time domain. The width of the current responses are limited to 4.7 and 3.1 ps in Si nano-APD and Si~3C-SiC MQB (consisting of five quantum barriers) nano-APD respectively for the input optical pulse of width 0.4 ps of 850 nm wavelength. On the other hand, the 3 dB upper cut-off frequencies of the above-mentioned diodes are obtained to be 68.63 and 82.64 GHz respectively. Simulation results show that MQB nano-APDs possess significantly faster time response and wider frequency response as compared to the flat Si nano-APDs under similar operating conditions.
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