J. Sim, I. Nam, Sung I. Hong, Jong-Duk Lee, Byung-Gook Park
{"title":"用平行应力法研究MOS电容器的软击穿和硬击穿","authors":"J. Sim, I. Nam, Sung I. Hong, Jong-Duk Lee, Byung-Gook Park","doi":"10.1109/ICVC.1999.820872","DOIUrl":null,"url":null,"abstract":"In this paper, we propose a new experimental technique, namely the parallel stressing method to investigate the breakdown mechanism of MOS capacitors. The SILC characteristics of the region excluding the breakdown spot of a broken-down capacitor can be deduced, utilizing this method. It was shown that HBD as well as SBD takes place locally, as expected. Multiple SBD phenomena at different points on a capacitor have been verified. However, HBD has not occurred multiply, which is thought to be because of the decrease in stress intensity after the event.","PeriodicalId":13415,"journal":{"name":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","volume":"55 1","pages":"194-196"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A study on soft- and hard-breakdowns in MOS capacitors using the parallel stressing method\",\"authors\":\"J. Sim, I. Nam, Sung I. Hong, Jong-Duk Lee, Byung-Gook Park\",\"doi\":\"10.1109/ICVC.1999.820872\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we propose a new experimental technique, namely the parallel stressing method to investigate the breakdown mechanism of MOS capacitors. The SILC characteristics of the region excluding the breakdown spot of a broken-down capacitor can be deduced, utilizing this method. It was shown that HBD as well as SBD takes place locally, as expected. Multiple SBD phenomena at different points on a capacitor have been verified. However, HBD has not occurred multiply, which is thought to be because of the decrease in stress intensity after the event.\",\"PeriodicalId\":13415,\"journal\":{\"name\":\"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)\",\"volume\":\"55 1\",\"pages\":\"194-196\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-10-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICVC.1999.820872\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICVC.1999.820872","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A study on soft- and hard-breakdowns in MOS capacitors using the parallel stressing method
In this paper, we propose a new experimental technique, namely the parallel stressing method to investigate the breakdown mechanism of MOS capacitors. The SILC characteristics of the region excluding the breakdown spot of a broken-down capacitor can be deduced, utilizing this method. It was shown that HBD as well as SBD takes place locally, as expected. Multiple SBD phenomena at different points on a capacitor have been verified. However, HBD has not occurred multiply, which is thought to be because of the decrease in stress intensity after the event.
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