金属环烷酸盐薄膜辐照铁电氧化物的微图案化过程

Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1994-08-07 DOI:10.1109/ISAF.1994.522298

S. Okamura, A. Kakimi, Y. Yagi, K. Mori, R. Tsukamoto

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引用次数: 0

摘要

以铁电氧化物前驱体金属环烷酸盐薄膜为材料，采用电子束辐照和溶剂显影法制备了线宽为0.35 /spl μ m的微细图案。经过800/spl℃的连续热处理，较大的晶型结晶为C轴取向的Bi/sub 4/Ti/sub 3/O/sub 12/单相晶型。通过对PZT和浸热法形成的Bi/sub 4/Ti/sub 3/O/sub 12/薄膜进行热处理，使线宽为1 /spl mu/m的微图案结晶为单晶，其体积减小到15%，这是该工艺的基础。表现出良好的铁电性能;PZT的剩余极化P/sub r/和矫顽力E/sub c/分别为24 /spl mu/ c/ cm/sup 2/和39 kV/cm, Bi/sub 4/Ti/sub 3/O/sub 12/分别为1.6 /spl mu/ c/ cm/sup 2/和24 kV/cm。

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Micropatterning process of ferroelectric oxides by irradiation of an electron beam on metal naphthenate films

Fine micropatterns with linewidth of 0.35 /spl mu/m were fabricated by irradiation with an electron beam of metal naphthenate films, being precursors of ferroelectric oxides, and development with a solvent. Relatively large patterns were crystallized into the single phase Bi/sub 4/Ti/sub 3/O/sub 12/ with c-axis orientation by successive heat-treatment at 800/spl deg/C. Micropatterns with linewidth of 1 /spl mu/m were crystallized into single crystals and their volume was reduced to 15% by the heat-treatment of PZT and Bi/sub 4/Ti/sub 3/O/sub 12/ thin films formed by the dipping pyrolysis method, which is the base of this patterning process. Good ferroelectric properties were exhibited; the remanent polarization P/sub r/ and the coercive field E/sub c/ were 24 /spl mu/C/cm/sup 2/ and 39 kV/cm for PZT, and 1.6 /spl mu/C/cm/sup 2/ and 24 kV/cm for Bi/sub 4/Ti/sub 3/O/sub 12/, respectively.

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Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics

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