{"title":"新设计的Fe/ZnO/MgO/Fe磁性隧道结对太赫兹波整流性能的估计","authors":"Hidekazhi Saito, H. Imamura","doi":"10.3379/msjmag.2003l001","DOIUrl":null,"url":null,"abstract":"We fabricated fully epitaxial Fe/ZnO/MgO/Fe magnetic tunnel junctions (MTJs) with low junction resistance-area products (several $\\Omega$ $\\mu$m$^2$) and conducted a theoretical estimation of square-low rectifying performance for a terahertz electromagnetic wave. Effective current responsivity up to 0.09 A/W at 1 THz was obtained under zero-bias voltage condition at room temperature. The result is approximately half the value of the best result obtained for experiments in semiconductor-based diodes, performed under similar conditions. The study strongly suggests that this MTJ system has a great potential for the rectifying element of the terahertz wave.","PeriodicalId":36791,"journal":{"name":"Journal of the Magnetics Society of Japan","volume":"44 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2020-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Estimation of Rectifying Performance for Terahertz Wave in Newly Designed Fe/ZnO/MgO/Fe Magnetic Tunnel Junction\",\"authors\":\"Hidekazhi Saito, H. Imamura\",\"doi\":\"10.3379/msjmag.2003l001\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We fabricated fully epitaxial Fe/ZnO/MgO/Fe magnetic tunnel junctions (MTJs) with low junction resistance-area products (several $\\\\Omega$ $\\\\mu$m$^2$) and conducted a theoretical estimation of square-low rectifying performance for a terahertz electromagnetic wave. Effective current responsivity up to 0.09 A/W at 1 THz was obtained under zero-bias voltage condition at room temperature. The result is approximately half the value of the best result obtained for experiments in semiconductor-based diodes, performed under similar conditions. The study strongly suggests that this MTJ system has a great potential for the rectifying element of the terahertz wave.\",\"PeriodicalId\":36791,\"journal\":{\"name\":\"Journal of the Magnetics Society of Japan\",\"volume\":\"44 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-01-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of the Magnetics Society of Japan\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.3379/msjmag.2003l001\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of the Magnetics Society of Japan","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3379/msjmag.2003l001","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0
摘要
我们制作了具有低结阻面积积(若干$\Omega$$\mu$ m $^2$)的全外延Fe/ZnO/MgO/Fe磁性隧道结(MTJs),并对太赫兹电磁波的低平方整流性能进行了理论估计。在室温条件下,零偏置电压下的有效电流响应率高达0.09 A/W。结果大约是在类似条件下进行的半导体基二极管实验中获得的最佳结果的一半。该研究强烈表明,该MTJ系统对太赫兹波的整流元件具有很大的潜力。
Estimation of Rectifying Performance for Terahertz Wave in Newly Designed Fe/ZnO/MgO/Fe Magnetic Tunnel Junction
We fabricated fully epitaxial Fe/ZnO/MgO/Fe magnetic tunnel junctions (MTJs) with low junction resistance-area products (several $\Omega$ $\mu$m$^2$) and conducted a theoretical estimation of square-low rectifying performance for a terahertz electromagnetic wave. Effective current responsivity up to 0.09 A/W at 1 THz was obtained under zero-bias voltage condition at room temperature. The result is approximately half the value of the best result obtained for experiments in semiconductor-based diodes, performed under similar conditions. The study strongly suggests that this MTJ system has a great potential for the rectifying element of the terahertz wave.