Н.В. Крыжановская, С.А. Блохин, И.С. Махов, Э.И. Моисеев, А.М. Надточий, Н.А. Фоминых, С.А. Минтаиров, Н. А. Калюжный, Ю. А. Гусева, М.М. Кулагина, Ф.И. Зубов, Е.С. Колодезный, Максим Владимирович Максимов, А. Е. Жуков
{"title":"p-i-n光电探测器研究基于InGaAs/GaAs量子点吸收介质","authors":"Н.В. Крыжановская, С.А. Блохин, И.С. Махов, Э.И. Моисеев, А.М. Надточий, Н.А. Фоминых, С.А. Минтаиров, Н. А. Калюжный, Ю. А. Гусева, М.М. Кулагина, Ф.И. Зубов, Е.С. Колодезный, Максим Владимирович Максимов, А. Е. Жуков","doi":"10.21883/ftp.2023.03.55634.4727","DOIUrl":null,"url":null,"abstract":"The static and dynamic characteristics of waveguide photodetectors with an absorbing region based on InGaAs/GaAs quantum well-dots were studied at room temperature. The absorption band of InGaAs/GaAs quantum well-dots is in the spectral range from 900 to 1100 nm. The waveguide photodetectors have a width of 50 µm and a length of the absorbing region from 92 µm to 400 µm. A low dark current density (1.1 и 22 μA/cm^2 at -1 и -20 V) and cut off frequency of 5.6 GHz, limited by the time constant of a parasitic equivalent electric RC circuit, were obtained.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"14 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Исследование p-i-n-фотодетектора с поглощающей средой на основе InGaAs/GaAs квантовых яма-точек\",\"authors\":\"Н.В. Крыжановская, С.А. Блохин, И.С. Махов, Э.И. Моисеев, А.М. Надточий, Н.А. Фоминых, С.А. Минтаиров, Н. А. Калюжный, Ю. А. Гусева, М.М. Кулагина, Ф.И. Зубов, Е.С. Колодезный, Максим Владимирович Максимов, А. Е. Жуков\",\"doi\":\"10.21883/ftp.2023.03.55634.4727\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The static and dynamic characteristics of waveguide photodetectors with an absorbing region based on InGaAs/GaAs quantum well-dots were studied at room temperature. The absorption band of InGaAs/GaAs quantum well-dots is in the spectral range from 900 to 1100 nm. The waveguide photodetectors have a width of 50 µm and a length of the absorbing region from 92 µm to 400 µm. A low dark current density (1.1 и 22 μA/cm^2 at -1 и -20 V) and cut off frequency of 5.6 GHz, limited by the time constant of a parasitic equivalent electric RC circuit, were obtained.\",\"PeriodicalId\":24054,\"journal\":{\"name\":\"Физика и техника полупроводников\",\"volume\":\"14 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Физика и техника полупроводников\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.21883/ftp.2023.03.55634.4727\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Физика и техника полупроводников","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.21883/ftp.2023.03.55634.4727","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Исследование p-i-n-фотодетектора с поглощающей средой на основе InGaAs/GaAs квантовых яма-точек
The static and dynamic characteristics of waveguide photodetectors with an absorbing region based on InGaAs/GaAs quantum well-dots were studied at room temperature. The absorption band of InGaAs/GaAs quantum well-dots is in the spectral range from 900 to 1100 nm. The waveguide photodetectors have a width of 50 µm and a length of the absorbing region from 92 µm to 400 µm. A low dark current density (1.1 и 22 μA/cm^2 at -1 и -20 V) and cut off frequency of 5.6 GHz, limited by the time constant of a parasitic equivalent electric RC circuit, were obtained.
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