基于新兴sub-32nm技术的两级运算放大器设计与分析

P. A. G. Sankar, K. Kumar
{"title":"基于新兴sub-32nm技术的两级运算放大器设计与分析","authors":"P. A. G. Sankar, K. Kumar","doi":"10.1109/ICANMEET.2013.6609382","DOIUrl":null,"url":null,"abstract":"Carbon Nanotube Field-Effect Transistor (CNFET) is a promising candidate for future electronic devices for low-power low-voltage digital or analog circuit application. In this paper, we presented a low-power low-voltage two stage operational amplifiers (OPAMPs) based on emerging CNFET technology. The proposed CNFET based operational amplifier (OPAMP) performance characteristic are studied and compared with existing CMOS sub-32nm technology. The operational amplifier performance characteristics are obtained by using HSPICE software for circuit simulation at 0.9V input supply voltage. Simulation results show that the proposed CNFET OPAMP circuit achieve high dc gain more than 45dB, high Gain Bandwidth up to 198MHz, phase margin is 48 degrees, the output swing is ±0.9V, settling time is 0.754ns, CMRR is 52.45dB, power supply rejection ratio is 54.35dB and low static power dissipation of 13μW. The results obtained suggest that the carbon nanotube (CNT) OPAMP has a promising potential for low-power, highs-peed applications in both analog and mixed-signal nanoelectronic circuits.","PeriodicalId":13708,"journal":{"name":"International Conference on Advanced Nanomaterials & Emerging Engineering Technologies","volume":"67 1","pages":"587-591"},"PeriodicalIF":0.0000,"publicationDate":"2013-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Design and analysis of two stage operational amplifier based on emerging sub-32nm technology\",\"authors\":\"P. A. G. Sankar, K. Kumar\",\"doi\":\"10.1109/ICANMEET.2013.6609382\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Carbon Nanotube Field-Effect Transistor (CNFET) is a promising candidate for future electronic devices for low-power low-voltage digital or analog circuit application. In this paper, we presented a low-power low-voltage two stage operational amplifiers (OPAMPs) based on emerging CNFET technology. The proposed CNFET based operational amplifier (OPAMP) performance characteristic are studied and compared with existing CMOS sub-32nm technology. The operational amplifier performance characteristics are obtained by using HSPICE software for circuit simulation at 0.9V input supply voltage. Simulation results show that the proposed CNFET OPAMP circuit achieve high dc gain more than 45dB, high Gain Bandwidth up to 198MHz, phase margin is 48 degrees, the output swing is ±0.9V, settling time is 0.754ns, CMRR is 52.45dB, power supply rejection ratio is 54.35dB and low static power dissipation of 13μW. The results obtained suggest that the carbon nanotube (CNT) OPAMP has a promising potential for low-power, highs-peed applications in both analog and mixed-signal nanoelectronic circuits.\",\"PeriodicalId\":13708,\"journal\":{\"name\":\"International Conference on Advanced Nanomaterials & Emerging Engineering Technologies\",\"volume\":\"67 1\",\"pages\":\"587-591\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-07-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Advanced Nanomaterials & Emerging Engineering Technologies\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICANMEET.2013.6609382\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Advanced Nanomaterials & Emerging Engineering Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICANMEET.2013.6609382","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11

摘要

碳纳米管场效应晶体管(CNFET)是未来低功耗、低压数字或模拟电路中很有前途的电子器件。本文提出了一种基于CNFET技术的低功率低压两级运算放大器(opamp)。研究了基于CNFET的运算放大器(OPAMP)的性能特性,并与现有的32nm以下CMOS技术进行了比较。在输入电源电压为0.9V时,利用HSPICE软件进行电路仿真,得到运算放大器的性能特性。仿真结果表明,所提出的CNFET OPAMP电路实现了大于45dB的高直流增益,高增益带宽高达198MHz,相位裕度为48度,输出摆幅为±0.9V,稳定时间为0.754ns, CMRR为52.45dB,电源抑制比为54.35dB,静态功耗低至13μW。结果表明,碳纳米管(CNT) OPAMP在模拟和混合信号纳米电子电路中具有低功耗、高速度的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design and analysis of two stage operational amplifier based on emerging sub-32nm technology
Carbon Nanotube Field-Effect Transistor (CNFET) is a promising candidate for future electronic devices for low-power low-voltage digital or analog circuit application. In this paper, we presented a low-power low-voltage two stage operational amplifiers (OPAMPs) based on emerging CNFET technology. The proposed CNFET based operational amplifier (OPAMP) performance characteristic are studied and compared with existing CMOS sub-32nm technology. The operational amplifier performance characteristics are obtained by using HSPICE software for circuit simulation at 0.9V input supply voltage. Simulation results show that the proposed CNFET OPAMP circuit achieve high dc gain more than 45dB, high Gain Bandwidth up to 198MHz, phase margin is 48 degrees, the output swing is ±0.9V, settling time is 0.754ns, CMRR is 52.45dB, power supply rejection ratio is 54.35dB and low static power dissipation of 13μW. The results obtained suggest that the carbon nanotube (CNT) OPAMP has a promising potential for low-power, highs-peed applications in both analog and mixed-signal nanoelectronic circuits.
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