{"title":"碳化硅mosfet高频交错DC/DC升压变换器的设计问题","authors":"M. Zdanowski, J. Rąbkowski, R. Barlik","doi":"10.1109/EPE.2014.6910918","DOIUrl":null,"url":null,"abstract":"This paper discusses design issues of the high-frequency, four-leg interleaved DC/DC boost converter (6kW/650V ) that combines high efficiency with high power density. Low switching energies of the applied SiC MOSFETs and Schottky diodes offer operation at high switching frequency. Together with suitable phase-shift of the control signals this leads to input/output current frequency multiplication up to 0.5MHz. Such a high frequencies and cancellation of the current ripples result in a significant reduction of the passive components, especially input inductors. The paper contains discussion of the converter operation and special solution the MOSFET gate drivers with CPLD logic. A design study regarding SiC semiconductors, inductors and cooling system, is also provided. Discussed issues are illustrated by simulation and experimental results. The 4×125kHz DC/DC boost converter (volume 0,75dm3) reaches efficiency close to 99% at nominal power of 6kW.","PeriodicalId":6508,"journal":{"name":"2014 16th European Conference on Power Electronics and Applications","volume":"26 1","pages":"1-10"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Design issues of the high-frequency interleaved DC/DC boost converter with Silicon Carbide MOSFETs\",\"authors\":\"M. Zdanowski, J. Rąbkowski, R. Barlik\",\"doi\":\"10.1109/EPE.2014.6910918\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper discusses design issues of the high-frequency, four-leg interleaved DC/DC boost converter (6kW/650V ) that combines high efficiency with high power density. Low switching energies of the applied SiC MOSFETs and Schottky diodes offer operation at high switching frequency. Together with suitable phase-shift of the control signals this leads to input/output current frequency multiplication up to 0.5MHz. Such a high frequencies and cancellation of the current ripples result in a significant reduction of the passive components, especially input inductors. The paper contains discussion of the converter operation and special solution the MOSFET gate drivers with CPLD logic. A design study regarding SiC semiconductors, inductors and cooling system, is also provided. Discussed issues are illustrated by simulation and experimental results. The 4×125kHz DC/DC boost converter (volume 0,75dm3) reaches efficiency close to 99% at nominal power of 6kW.\",\"PeriodicalId\":6508,\"journal\":{\"name\":\"2014 16th European Conference on Power Electronics and Applications\",\"volume\":\"26 1\",\"pages\":\"1-10\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-09-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 16th European Conference on Power Electronics and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EPE.2014.6910918\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 16th European Conference on Power Electronics and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPE.2014.6910918","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design issues of the high-frequency interleaved DC/DC boost converter with Silicon Carbide MOSFETs
This paper discusses design issues of the high-frequency, four-leg interleaved DC/DC boost converter (6kW/650V ) that combines high efficiency with high power density. Low switching energies of the applied SiC MOSFETs and Schottky diodes offer operation at high switching frequency. Together with suitable phase-shift of the control signals this leads to input/output current frequency multiplication up to 0.5MHz. Such a high frequencies and cancellation of the current ripples result in a significant reduction of the passive components, especially input inductors. The paper contains discussion of the converter operation and special solution the MOSFET gate drivers with CPLD logic. A design study regarding SiC semiconductors, inductors and cooling system, is also provided. Discussed issues are illustrated by simulation and experimental results. The 4×125kHz DC/DC boost converter (volume 0,75dm3) reaches efficiency close to 99% at nominal power of 6kW.
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