低温环境下烃类热固性树脂的击穿强度特性

Takaaki Matsuki, Y. Inoue, K. Hamasuna, M. Kozako, M. Hikita, Naoki Fukumoto, N. Kamei
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摘要

双环戊二烯(DCP)树脂是一种烃基热固性树脂(HTR),具有比环氧树脂(EP)更好的抗裂性,是一种应用于液氦(LHe)、液氮(LN2)等低温区域的有机绝缘材料。本文介绍了DCP在交流和标准雷电冲击(Imp)电压作用下,在室温和LN2温度下的介电击穿强度Eb,并与EP树脂的结果进行了比较。在LN2温度下,DCP的Eb大于室温下的Eb,说明∂Eb∂/T < 0,且大于EP。实验结果表明,室温下EP和DCP的Eb随着样品厚度d的增加而减小,说明∂Eb∂/d < 0。由于EP表现出∂Eb∂/T < 0和∂Eb/∂d < 0,因此我们尝试从电子雪崩击穿理论的角度来讨论电子雪崩击穿理论在EP中的主导作用。结果表明,EP的电离系数H为1670 kV/mm,平均自由程λ为195 nm,迁移率μ为65.4×10-4 m2/Vs。另一方面,由于DCP在低温区表现出负的温度依赖(∂Eb/∂T < 0),因此基于受激杂质能级(ΔV)电子与导带电子相互作用产生的能量增益与晶格系统的能量损失之间的平衡,采用Frohlich提出的电子热击穿机制讨论了DCP的击穿机理。结果,ΔV在DCP中被评估为5.7 meV。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Characteristics of Breakdown Strength of Hydrocarbon Thermosetting Resin in Low Temperature Environment
Dicyclopentadiene (DCP) resin is a hydrocarbon-based thermosetting resin (HTR) with better crack resistance than epoxy (EP) resin, as an organic insulating material used in low-temperature regions such as liquid helium (LHe) and liquid nitrogen (LN2). This paper presents dielectric breakdown strength, Eb, of DCP under AC and standard lightning impulse (Imp) voltage application at room temperature and LN2 temperature while comparing with results of EP resin. It was found that Eb of DCP at LN2 temperature exceeded that at room temperature, indicating ∂Eb∂/T < 0, and larger than that of EP. Experimental results showed that Eb of EP and DCP at room temperature decreased with increasing the sample thickness d, indicating ∂Eb∂/d < 0. Since EP exhibited ∂Eb∂/T < 0 and ∂Eb/∂d < 0, an attempt is made to discuss breakdown mechanism in terms of the electron avalanche breakdown theory as a dominant one in EP. As a result, the ionization coefficient H of EP was evaluated as 1670 kV/mm, the mean free path λ as 195 nm, and the mobility μ as 65.4×10-4 m2/Vs. On the other hand, since DCP shows a negative temperature dependence (∂Eb/∂T < 0) in the low temperature region, the breakdown mechanism is discussed with the electronic thermal breakdown mechanism proposed by Frohlich based on the balance between the energy gain due to the interaction between electrons in the excited impurity level (ΔV) and electrons in the conduction band, and the energy loss to the lattice system. As a result, ΔV was evaluated to be 5.7 meV in DCP.
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