采用喷雾热解技术制备了具有成本效益的CdSe薄膜

IF 1.3 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER
A. D. Kanwate, V. R. Panse, E. U. Masumdar, E. Palupi, R. Umam, Ardimas, G. Antarnusa
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引用次数: 0

摘要

摘要:采用自制的喷雾热解技术,在3000℃的温度下将CdSe薄膜沉积在玻璃基板上。通过x射线衍射(XRD)、场发射扫描电镜(FESEM)、能量色散x射线分析(EDAX)、紫外可见光谱学和电学等手段对薄膜进行了表征。CdSe膜的XRD谱图显示为多晶六方晶体结构,膜的平均晶粒尺寸为16.3 nm。SEM显微照片显示膜层均匀、黏附、无针孔、无裂纹。EDAX分析表明,制备膜中Cd和Se的元素化学计量量分别为49.30%和50.70%。光学带隙为直接带隙,为1.78 eV。薄膜在室温下的电阻率为6.9 × 106 Ωcm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
CdSe thin films prepared by the homemade and cost effective spray pyrolysis technique
Abstract The CdSe thin film was deposited on glass substrate by homemade spray pyrolysis technique at substrate temperature 3000C. Further the film was characterized through X-ray diffraction (XRD), Field emission scanning electron microscopy (FESEM), Energy dispersive X-ray analysis (EDAX), UV-Visible optical spectroscopy and Electrical. The XRD pattern of CdSe film shows polycrystalline hexagonal crystal structure with average crystalline size of the film was 16.3 nm. The SEM micrograph shows the film was uniform, adherent, without pin-hole and crack free. From EDAX analysis conform that the presence of Cd and Se in prepared film with elemental stoichiometry of Cd and Se was 49.30% and 50.70%, respectively. The optical band gap was direct band gap and it was found 1.78 eV. The electrical resistivity of the film at room temperature was 6.9 × 106 Ωcm.
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来源期刊
Ferroelectrics Letters Section
Ferroelectrics Letters Section 物理-物理:凝聚态物理
CiteScore
1.10
自引率
0.00%
发文量
1
审稿时长
4.8 months
期刊介绍: Ferroelectrics Letters is a separately published section of the international journal Ferroelectrics. Both sections publish theoretical, experimental and applied papers on ferroelectrics and related materials, including ferroelastics, ferroelectric ferromagnetics, electrooptics, piezoelectrics, pyroelectrics, nonlinear dielectrics, polymers and liquid crystals. Ferroelectrics Letters permits the rapid publication of important, quality, short original papers on the theory, synthesis, properties and applications of ferroelectrics and related materials.
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