Degradation Mechanisms in a Proton Irradiated HEMT with 3DEG Conduction and 3DHG as a Back Barrier

This work evaluates the degradation mechanisms of the proton irradiated HEMTs incorporating graded AlGaN layers that support 3DEG for the conduction and 3DHG as a back barrier and subsequently evaluating it for dosimeter applications. The results presented demonstrate the deleterious effects of the proton fluence on the device's transfer characteristics in creating a bottleneck towards the flow of carriers in the 3DEG sheet. However, the trench gate arrangement with HfO2 insulator controlling the bottleneck for the device operation remains intact even at a high proton fluence.