等离子体增强化学气相沉积f掺杂SiO/ sub2 /薄膜的介电击穿

ICSD'98. Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics (Cat. No.98CH36132) Pub Date : 1998-06-22 DOI:10.1109/ICSD.1998.709302

H. Kato, S. Sakai, A. Takami, Y. Ohki, K. Ishii

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引用次数: 0

摘要

采用等离子体增强化学气相沉积法合成了四乙氧基硅烷和CF/sub /氟掺杂二氧化硅薄膜，并采用短持续电压脉冲自愈击穿技术测量了薄膜的介电强度。因此，含氟量较高的薄膜具有较高的介电强度。从多个方面探讨了这种增长的原因，并提出了两种说服机制。

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Dielectric breakdown in F-doped SiO/sub 2/ films formed by plasma-enhanced chemical vapor deposition

Fluorine-doped thin silicon dioxide films were synthesized by plasma-enhanced chemical vapor deposition of tetraethoxysilane and CF/sub 4/, and the dielectric strength was measured with a self-healing breakdown technique by applying short duration voltage pulses. As a result, the film containing a higher amount of fluorine has a higher dielectric strength. The reason for this increase is discussed from various aspects, and two persuasive mechanisms are presented.

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ICSD'98. Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics (Cat. No.98CH36132)

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