单偏置砷化镓量子阱的太赫兹电光调制

Postconference Digest Quantum Electronics and Laser Science, 2003. QELS. Pub Date : 2003-06-06 DOI:10.1109/QELS.2003.238209

V. Ciulin, S. Carter, M. Sherwin, A. Huntington, L. Coldren, A. Maslov, D. Citrin

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引用次数: 0

摘要

研究了在太赫兹场驱动下GaAs量子阱的带间光学特性。该场的应用使激子的吸收能发生位移。此外，在140 K的温度下，可以观察到太赫兹光学边带。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Terahertz electrooptic modulation of a single biased GaAs quantum well

We investigate the optical interband properties of GaAs quantum wells driven by a terahertz field. The application of this field shifts the exciton absorption energy. Additionally, terahertz optical sidebands are observed up to 140 K.

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Postconference Digest Quantum Electronics and Laser Science, 2003. QELS.

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