纳米柱型电极对HFOx基RRAM性能的影响

2020 China Semiconductor Technology International Conference (CSTIC) Pub Date : 2020-06-26 DOI:10.1109/CSTIC49141.2020.9282569

Baotong Zhang, Xiaokang Li, Yuancheng Yang, Haixia Li, Ru Huang, Ming Li, Peimin Lu

{"title":"纳米柱型电极对HFOx基RRAM性能的影响","authors":"Baotong Zhang, Xiaokang Li, Yuancheng Yang, Haixia Li, Ru Huang, Ming Li, Peimin Lu","doi":"10.1109/CSTIC49141.2020.9282569","DOIUrl":null,"url":null,"abstract":"In this work, the performance of HfOx-based RRAM with 30nm nanopillar-type electrode was investigated. Experiment results show that the novel device has lower operation voltages and higher resistance ratio than conventional flat electrode RRAM. The underlying physical mechanism is attributed to the enhanced electric field by the nanopillar electrode. This research will provide a valuable guidance for future scaling of oxide-based RRAM.","PeriodicalId":6848,"journal":{"name":"2020 China Semiconductor Technology International Conference (CSTIC)","volume":"39 3 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Impact of Nanopillar-Type Electrode on HFOx -Based RRAM Performance\",\"authors\":\"Baotong Zhang, Xiaokang Li, Yuancheng Yang, Haixia Li, Ru Huang, Ming Li, Peimin Lu\",\"doi\":\"10.1109/CSTIC49141.2020.9282569\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, the performance of HfOx-based RRAM with 30nm nanopillar-type electrode was investigated. Experiment results show that the novel device has lower operation voltages and higher resistance ratio than conventional flat electrode RRAM. The underlying physical mechanism is attributed to the enhanced electric field by the nanopillar electrode. This research will provide a valuable guidance for future scaling of oxide-based RRAM.\",\"PeriodicalId\":6848,\"journal\":{\"name\":\"2020 China Semiconductor Technology International Conference (CSTIC)\",\"volume\":\"39 3 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 China Semiconductor Technology International Conference (CSTIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSTIC49141.2020.9282569\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC49141.2020.9282569","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文研究了采用30nm纳米柱型电极的hfox基RRAM的性能。实验结果表明，与传统的平面电极RRAM相比，该器件具有更低的工作电压和更高的电阻比。潜在的物理机制归因于纳米柱电极增强的电场。该研究将为未来氧化基RRAM的规模化提供有价值的指导。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Impact of Nanopillar-Type Electrode on HFOx -Based RRAM Performance

In this work, the performance of HfOx-based RRAM with 30nm nanopillar-type electrode was investigated. Experiment results show that the novel device has lower operation voltages and higher resistance ratio than conventional flat electrode RRAM. The underlying physical mechanism is attributed to the enhanced electric field by the nanopillar electrode. This research will provide a valuable guidance for future scaling of oxide-based RRAM.

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2020 China Semiconductor Technology International Conference (CSTIC)

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