CMOS基板上的高性能微机械电感器

IEEE MTT-S International Microwave Symposium Digest, 2005. Pub Date : 2005-06-12 DOI:10.1109/MWSYM.2005.1516705

Dae-Hee Weon, Jeong-Il Kim, Jong-Hyeok Jeon, S. Mohammadi, L. Katehi

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引用次数: 16

摘要

结合微加工和三维(3-D)加工技术，我们在CMOS级Si衬底(10/spl sim/20 /spl Omega/-cm电阻率)上设计，制造和测试了具有非常高质量因数和高谐振频率的电感器。在此过程中，1.2 nH电感在12GHz时实现了创纪录的高质量因数/spl sim/140，在8至20GHz频率范围内Q > 100。制造这些电感器的技术是基于一步沉积和电镀Cr和Au的应力层状金属组合，并且与CMOS技术完全兼容。

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High performance micro-machined inductors on CMOS substrate

Using a combination of micromachining and three-dimensional (3-D) processing technologies, we have designed, fabricated, and tested inductors on CMOS grade Si substrate (10/spl sim/20 /spl Omega/-cm resistivity) which exhibit very high quality factor and high resonant frequency. A 1.2 nH inductor in this process achieves a record high quality factor of /spl sim/140 at 12GHz, with Q > 100 for frequencies between 8 to 20GHz. The technology to fabricate these inductors is based on one step deposition and electroplating of a stressed layered metal combination of Cr and Au and is fully compatible with CMOS technology.

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IEEE MTT-S International Microwave Symposium Digest, 2005.

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