III-V型氮化物微悬臂位移传感器

2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS) Pub Date : 2015-06-21 DOI:10.1109/TRANSDUCERS.2015.7180891

A. Talukdar, G. Koley

{"title":"III-V型氮化物微悬臂位移传感器","authors":"A. Talukdar, G. Koley","doi":"10.1109/TRANSDUCERS.2015.7180891","DOIUrl":null,"url":null,"abstract":"The application of gated piezoresitor (or `piezotransistor') embedded GaN microcantilever utilizing unique properties of AlGaN/GaN Heterojunction Field Effect Transistor (HFET) to very significantly enhance the device performance in order to transduce femtoscale displacement have been demonstrated. This novel technology offers several orders higher sensitivity than state-of-the-art and enabled detection of minute explosive in open ambient by photoacoustic spectroscopy.","PeriodicalId":6465,"journal":{"name":"2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2015-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"III–V nitride microcantilever as a displacement sensor\",\"authors\":\"A. Talukdar, G. Koley\",\"doi\":\"10.1109/TRANSDUCERS.2015.7180891\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The application of gated piezoresitor (or `piezotransistor') embedded GaN microcantilever utilizing unique properties of AlGaN/GaN Heterojunction Field Effect Transistor (HFET) to very significantly enhance the device performance in order to transduce femtoscale displacement have been demonstrated. This novel technology offers several orders higher sensitivity than state-of-the-art and enabled detection of minute explosive in open ambient by photoacoustic spectroscopy.\",\"PeriodicalId\":6465,\"journal\":{\"name\":\"2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TRANSDUCERS.2015.7180891\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TRANSDUCERS.2015.7180891","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

门控压电电阻(或“压电晶体管”)嵌入GaN微悬臂的应用，利用AlGaN/GaN异质结场效应晶体管(HFET)的独特特性，非常显著地提高了器件性能，以实现飞尺度位移。这种新技术的灵敏度比目前最先进的技术高几个数量级，并且可以通过光声光谱检测开放环境中的微小爆炸物。

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III–V nitride microcantilever as a displacement sensor

The application of gated piezoresitor (or `piezotransistor') embedded GaN microcantilever utilizing unique properties of AlGaN/GaN Heterojunction Field Effect Transistor (HFET) to very significantly enhance the device performance in order to transduce femtoscale displacement have been demonstrated. This novel technology offers several orders higher sensitivity than state-of-the-art and enabled detection of minute explosive in open ambient by photoacoustic spectroscopy.

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2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)

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