J. Zibin, K. Rakennus, K. Tappura, G. Zhang, J. Lammasniemi, H. Asonen
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InP homojunction solar cells grown by gas-source molecular beam epitaxy
The application of the gas-source molecular beam epitaxy technique to the growth of InP homojunction solar cells is discussed. Cells of various emitter thicknesses as well as with a graded emitter were grown. Attempts to improve on the blue response of the 200 AA non-graded emitter solar cell by growing 100 AA and graded 200 AA emitter cells were unsuccessful; the blue responses for all three cells were nearly identical. The spectral response of the >
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