提高GaN/AlGaN多量子阱无电子阻挡层UV-LED的发光效率和辐射复合率

IF 0.6 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Samadrita Das, T. Lenka, F. Talukdar, R. Velpula, H. Nguyen
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引用次数: 2

摘要

本文利用Atlas TCAD设计了一种无电子阻挡层(EBL)的GaN/AlGaN发光二极管(LED),该二极管在有源区量子势垒中具有梯度组成。该器件在c-平面中包含GaN缓冲层,用于更好的载流子运输和低效率下垂。所提出的LED具有具有铝成分的量子势垒,每个三角形的梯度从20%到~2%,而传统的具有方形势垒。所得到的结构显著减少了电子泄漏,改善了活性区的空穴注入,从而产生了更高的辐射复合。模拟结果显示出最高的内部量子效率(IQE)(48.4%),与传统LED相比显着提高。所设计的具有梯度量子势垒结构的无EBL LED在60 mA时获得了显著的最小效率下降~7.72%。我们的研究表明,与传统的GaN/AlGaN EBL LED结构相比,该结构在60 mA注入电流下的辐射复合提高了约136.7%,减少了电子泄漏,光功率提高了约8.084%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Efficiency and radiative recombination rate enhancement in GaN/AlGaN multi-quantum well-based electron blocking layer free UV-LED for improved luminescence
In this paper, an electron blocking layer (EBL) free GaN/AlGaN light emitting diode (LED) is designed using Atlas TCAD with graded composition in the quantum barriers of the active region. The device has a GaN buffer layer incorporated in a c-plane for better carrier transportation and low efficiency droop. The proposed LED has quantum barriers with aluminium composition graded from 20% to ~2% per triangular, whereas the conventional has square barriers. The resulted structures exhibit significantly reduced electron leakage and improved hole injection into the active region, thus generating higher radiative recombination. The simulation outcomes exhibit the highest internal quantum efficiency (IQE) (48.4%) indicating a significant rise compared to the conventional LED. The designed EBL free LED with graded quantum barrier structure acquires substantially minimized efficiency droop of ~7.72% at 60 mA. Our study shows that the proposed structure has improved radiative recombination by ~136.7%, reduced electron leakage, and enhanced optical power by ~8.084% at 60 mA injected current as compared to conventional GaN/AlGaN EBL LED structure.
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来源期刊
Facta Universitatis-Series Electronics and Energetics
Facta Universitatis-Series Electronics and Energetics ENGINEERING, ELECTRICAL & ELECTRONIC-
自引率
16.70%
发文量
10
审稿时长
20 weeks
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