InP太阳能电池的加工和辐射缺陷

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147292

P. Drevinsky, C. E. Caefer, C. Keavney

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引用次数: 3

摘要

描述了用深能级瞬态光谱(DLTS)检测和表征p型InP中加工和辐射诱导缺陷的方法。讨论了退火效应，关键胞参数的初始恢复与主要缺陷的退火有关。结果表明，植入结和外延结的dts光谱存在差异。植入的二极管不显示H4 (0.38 eV)水平，对Frenkel对，V/sub p/ p/ sub i/身份分配产生怀疑。载流子损耗、V/sub oc/、I/sub sc/的降解以及电池效率与优势空穴陷阱H4和H3的产生有关。观察到的回收率与H4和H3的退火有关。

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Processing- and radiation-produced defects in InP solar cells

The detection and characterization of processing- and radiation-induced defects in p-type InP using deep level transient spectroscopy (DLTS) are described. Annealing effects are discussed and initial recovery of critical cell parameters is correlated with anneal of dominant defects. It is shown that DLTS spectra differ for implanted and epitaxial junctions. The implanted diodes do not show the H4 (0.38 eV) level, casting doubt on the Frenkel pair, V/sub p/-P/sub i/, identity assignment. Carrier loss and degradation of V/sub oc/, I/sub sc/, and cell efficiency correlate with the production of dominant hole traps H4 and H3. Observed recovery correlates with anneal of H4 and H3.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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