高能电子对LHD中ECRH的影响

S. Kubo, H. Takahashi, T. Shimozuma, Y. Yoshimura, M. Nishiura, H. Igami, S. Ogasawara, R. Makino
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引用次数: 6

摘要

通过提高注入功率和降低电子密度,LHD的中心体电子温度达到了20 keV以上。这种无碰撞状态对新古典输运和潜在的构造形成具有重要意义。从硬x射线PHA中可以看出有相当数量的高能电子存在,从汤姆逊散射中可以估计出储存的能量和动能之间的差异。ECE谱对高能电子的存在也很敏感,并通过求解辐射传递方程进行了讨论。ECRH对体和高能电子的功率吸收受到高能电子的加速和约束的显著影响。通过对比实验结果和假设不同密度和平均能量下的射线追迹计算,讨论了高能电子的加热机理和加速过程。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Influence of High Energy Electrons on ECRH in LHD
The central bulk electron temperature of more than 20 keV is achieved in LHD as a result of increasing the injection power and the lowering the electron density near 2 10 18 m 3 . Such collision-less regime is important from the aspect of the neoclas- sical transport and also the potential structure formation. The presences of appreciable amount of high energy electrons are indicated from hard X-ray PHA, and the discrep- ancy between the stored energy and kinetic energy estimated from Thomson scattering. ECE spectrum are also sensitive to the presence of high energy electrons and discussed by solving the radiation transfer equation. The ECRH power absorption to the bulk and the high energy electrons are dramatically affected by the acceleration and the confinement of high energy electrons. The heating mechanisms and the acceleration process of high energy electrons are discussed by comparing the experimental results and the ray tracing calculation under assumed various density and mean energy of high energy electrons.
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