采用金属有机化学气相沉积法生长InGaAs/InP双异质结双极晶体管

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147344

M. Ohkubo, A. Iketani, T. Ijichi, T. Kikuta

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引用次数: 0

摘要

介绍了用金属有机化学气相沉积法(MOCVD)制备InGaAs/InP双异质结双极晶体管(D-HBTs)的方法。在p/sup +/ InGaAs基极和n/sup -/ InP集电极之间插入梯度- ingaasp层，发现有梯度层的D-HBTs的电流增益约为没有梯度层的D-HBTs的两倍，集电极电流对集电极/发射极电压的依赖性小于没有梯度层的D-HBTs。在集电极电流密度为1*10/sup 4/ a /cm/sup 2/时，在发射极面积为25*25 μ m/sup 2/时，测量到电流增益可达2300。

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InGaAs/InP double-heterojunction bipolar transistors with graded-InGaAsP between InGaAs base and InP collector grown by metal organic chemical vapor deposition

The fabrication of InGaAs/InP double-heterojunction bipolar transistors (D-HBTs) grown by metal organic chemical vapor deposition (MOCVD) is described. With graded-InGaAsP layers inserted between the p/sup +/ InGaAs base and n/sup -/ InP collector, the current gain of D-HBTs with graded layers was found to be about twice as large as that of D-HBTs without graded layers, and the dependence of collector current on collector/emitter voltage was smaller than without graded layers. The current gain was measured up to 2300 with 25*25 mu m/sup 2/ emitter area at a collector current density of 1*10/sup 4/ A/cm/sup 2/.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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