Kihwan Kim, Hyeonwook Park, W. Kim, G. Hanket, W. Shafarman
{"title":"三步H2Se/Ar/H2S反应对Cu- in - ga金属前驱体Cu(InGa)(SeS)2厚度还原的影响","authors":"Kihwan Kim, Hyeonwook Park, W. Kim, G. Hanket, W. Shafarman","doi":"10.1109/pvsc-vol2.2012.6656751","DOIUrl":null,"url":null,"abstract":"Cu(In,Ga)(Se,S)<inf>2</inf> (CIGSS) absorbers with thicknesses from 1.9 to 0.25 µm have been grown using a three-step selenization/Ar-anneal/sulfization reaction ofCu-In-Ga metal precursors. Material characterization revealed changes in orientation, apparent grain size, and formation of voids at the Mo/CIGSS interface with reduced thickness. Even with absorber thickness decreased to 0.25 µm and lateral compositional nonuniformity, V<inf>OC</inf> and fill factor were nearly sustained, while J<inf>SC</inf> decreased due to incomplete absorption. With the 0.25-µm-thick absorber layer, an efficiency of 9.1% (without AR coating) with V<inf>OC</inf> = 612 mV, J<inf>SC</inf> = 21.0 mA/cm<sup>2</sup>, and FF = 71.1% was obtained.","PeriodicalId":6420,"journal":{"name":"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2","volume":"1 1","pages":"1-5"},"PeriodicalIF":0.0000,"publicationDate":"2013-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Effect of reduced Cu(InGa)(SeS)2 thickness using three-step H2Se/Ar/H2S reaction of Cu-In-Ga metal precursor\",\"authors\":\"Kihwan Kim, Hyeonwook Park, W. Kim, G. Hanket, W. Shafarman\",\"doi\":\"10.1109/pvsc-vol2.2012.6656751\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Cu(In,Ga)(Se,S)<inf>2</inf> (CIGSS) absorbers with thicknesses from 1.9 to 0.25 µm have been grown using a three-step selenization/Ar-anneal/sulfization reaction ofCu-In-Ga metal precursors. Material characterization revealed changes in orientation, apparent grain size, and formation of voids at the Mo/CIGSS interface with reduced thickness. Even with absorber thickness decreased to 0.25 µm and lateral compositional nonuniformity, V<inf>OC</inf> and fill factor were nearly sustained, while J<inf>SC</inf> decreased due to incomplete absorption. With the 0.25-µm-thick absorber layer, an efficiency of 9.1% (without AR coating) with V<inf>OC</inf> = 612 mV, J<inf>SC</inf> = 21.0 mA/cm<sup>2</sup>, and FF = 71.1% was obtained.\",\"PeriodicalId\":6420,\"journal\":{\"name\":\"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2\",\"volume\":\"1 1\",\"pages\":\"1-5\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/pvsc-vol2.2012.6656751\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/pvsc-vol2.2012.6656751","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of reduced Cu(InGa)(SeS)2 thickness using three-step H2Se/Ar/H2S reaction of Cu-In-Ga metal precursor
Cu(In,Ga)(Se,S)2 (CIGSS) absorbers with thicknesses from 1.9 to 0.25 µm have been grown using a three-step selenization/Ar-anneal/sulfization reaction ofCu-In-Ga metal precursors. Material characterization revealed changes in orientation, apparent grain size, and formation of voids at the Mo/CIGSS interface with reduced thickness. Even with absorber thickness decreased to 0.25 µm and lateral compositional nonuniformity, VOC and fill factor were nearly sustained, while JSC decreased due to incomplete absorption. With the 0.25-µm-thick absorber layer, an efficiency of 9.1% (without AR coating) with VOC = 612 mV, JSC = 21.0 mA/cm2, and FF = 71.1% was obtained.
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