三步H2Se/Ar/H2S反应对Cu- in - ga金属前驱体Cu(InGa)(SeS)2厚度还原的影响

Kihwan Kim, Hyeonwook Park, W. Kim, G. Hanket, W. Shafarman
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引用次数: 7

摘要

采用Cu-In-Ga金属前驱体的硒化/ ar退火/磺化三步反应,制备了厚度为1.9 ~ 0.25 μ m的Cu(In,Ga)(Se,S)2 (CIGSS)吸收体。材料表征表明,随着厚度的减小,Mo/CIGSS界面的取向、表观晶粒尺寸和空洞的形成都发生了变化。即使吸收剂厚度降低到0.25µm,且横向成分不均匀,VOC和填充系数几乎保持不变,而JSC则由于吸收不完全而降低。当吸收层厚度为0.25-µm时,效率为9.1%(无AR涂层),VOC = 612 mV, JSC = 21.0 mA/cm2, FF = 71.1%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of reduced Cu(InGa)(SeS)2 thickness using three-step H2Se/Ar/H2S reaction of Cu-In-Ga metal precursor
Cu(In,Ga)(Se,S)2 (CIGSS) absorbers with thicknesses from 1.9 to 0.25 µm have been grown using a three-step selenization/Ar-anneal/sulfization reaction ofCu-In-Ga metal precursors. Material characterization revealed changes in orientation, apparent grain size, and formation of voids at the Mo/CIGSS interface with reduced thickness. Even with absorber thickness decreased to 0.25 µm and lateral compositional nonuniformity, VOC and fill factor were nearly sustained, while JSC decreased due to incomplete absorption. With the 0.25-µm-thick absorber layer, an efficiency of 9.1% (without AR coating) with VOC = 612 mV, JSC = 21.0 mA/cm2, and FF = 71.1% was obtained.
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