S-TFT:用于电路模拟的多晶硅薄膜晶体管解析模型

Gi-Young Yang, Y. Kim, Taek-Soo Kim, J. Kong
{"title":"S-TFT:用于电路模拟的多晶硅薄膜晶体管解析模型","authors":"Gi-Young Yang, Y. Kim, Taek-Soo Kim, J. Kong","doi":"10.1109/CICC.2000.852651","DOIUrl":null,"url":null,"abstract":"This paper describes the S-TFT model developed for poly-Si TFT which improves the accuracy dramatically. The proposed model emphasis is on deriving the large parasitic resistance characteristics at low Vds by adding the junction current to the on-current. The physical-based subthreshold and off-state current model are also considered. The model guarantees the continuities of the current and the derivatives. Compared to the RPI model, known to be the best model, the proposed model improved overall simulation speed by 40-50% due to the better convergence characteristics.","PeriodicalId":20702,"journal":{"name":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","volume":"18 1","pages":"213-216"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"S-TFT: an analytical model of polysilicon thin-film transistors for circuit simulation\",\"authors\":\"Gi-Young Yang, Y. Kim, Taek-Soo Kim, J. Kong\",\"doi\":\"10.1109/CICC.2000.852651\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the S-TFT model developed for poly-Si TFT which improves the accuracy dramatically. The proposed model emphasis is on deriving the large parasitic resistance characteristics at low Vds by adding the junction current to the on-current. The physical-based subthreshold and off-state current model are also considered. The model guarantees the continuities of the current and the derivatives. Compared to the RPI model, known to be the best model, the proposed model improved overall simulation speed by 40-50% due to the better convergence characteristics.\",\"PeriodicalId\":20702,\"journal\":{\"name\":\"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)\",\"volume\":\"18 1\",\"pages\":\"213-216\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.2000.852651\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2000.852651","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

本文介绍了针对多晶硅TFT开发的S-TFT模型,该模型大大提高了精度。该模型的重点是通过在导通电流上增加结电流来获得低Vds下的大寄生电阻特性。还考虑了基于物理的子阈值和断态电流模型。该模型保证了当前和导数的连续性。与已知的最佳模型RPI模型相比,该模型由于具有更好的收敛特性,将整体仿真速度提高了40-50%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
S-TFT: an analytical model of polysilicon thin-film transistors for circuit simulation
This paper describes the S-TFT model developed for poly-Si TFT which improves the accuracy dramatically. The proposed model emphasis is on deriving the large parasitic resistance characteristics at low Vds by adding the junction current to the on-current. The physical-based subthreshold and off-state current model are also considered. The model guarantees the continuities of the current and the derivatives. Compared to the RPI model, known to be the best model, the proposed model improved overall simulation speed by 40-50% due to the better convergence characteristics.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信